| PART |
Description |
Maker |
| UPD44324182F5-E37-EQ2-A UPD44324362F5-E37-EQ2-A UP |
36M-BIT DDRII SRAM 2-WORD BURST OPERATION 36M条位SRAM2条DDRII字爆发运
|
NEC Corp.
NEC, Corp.
|
| UPD44325092BF5-E33-FQ1 PD44325092B-15 |
4M X 9 QDR SRAM, 0.45 ns, PBGA165
36M-BIT QDRTM II SRAM 2-WORD BURST OPERATION
|
Renesas Electronics Corporation
|
| UPD44164082F5-E50-EQ1 UPD44164362F5-E50-EQ1 UPD441 |
18M-BIT DDRII SRAM 2-WORD BURST OPERATION 1800万位的SRAM 2条DDRII字爆发运
2M X 8 DDR SRAM, 0.45 ns, PBGA165
|
NEC, Corp.
|
| UPD44164364F5-E60-EQ1 UPD44164084 UPD44164084F5-E4 |
18M-BIT DDRII SRAM 4-WORD BURST OPERATION
|
NEC[NEC]
|
| R1QFA7218AB R1QCA7218AB R1QDA7218AB R1QCA7236AB R1 |
72-Mbit DDRII SRAM 2-word Burst
|
Renesas Electronics Corporation
|
| R1QJA4436RBG R1QJA4418RBG R1QBA4418RBG R1QBA4436RB |
144-Mbit DDRII SRAM 2-word Burst
144-Mbit DDRII SRAM 2-word Burst
|
Renesas Electronics Corporation
|
| K7I161882B-FC16 K7I161882B-FC20 K7I161882B-FC25 K7 |
512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM 512Kx36位，1Mx18位首席信息官b2DDRII的SRAM
GT 35C 35#16 PIN PLUG RTANG
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| M6MGB331S8BKT M6MGT331S8BKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation.
|
| M5M4V16169DRT-15 M5M4V16169DTP |
16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM 16MCDRAM6米（100万字6位）6K的缓存内存（1024字由16位）的SRAM
|
Mitsubishi Electric, Corp.
|
| MS52C1162A |
65,536-Word × 16-Bit or 131,072-Word × 8-Bit STATIC RAM 1,048,576-Word × 16-Bit or 2,097,152-Word × 8-Bit One Time PROM(64k字6位或128k字位静态RAM 1M字6位或2M字OTPROM)
|
OKI SEMICONDUCTOR CO., LTD.
|
| LC3564B LC3564BM LC3564BS LC3564BT LC3564BT-10 LC3 |
x8 SRAM
64K (8192-word 8-bit) SRAM with OE, CE1, and CE2 Control Pins
64K (8192-word ? 8-bit) SRAM with OE, CE1, and CE2 Control Pins
64K (8192-word x8-bit) SRAM with NOT OE, NOT CE1, and CE2 Control Pins
64K (8192-word x 8-bit) SRAM with NOT OE, NOT CE1, and CE2 Control Pins
64K (8192-word 8-bit) SRAM with OE / CE1 / and CE2 Control Pins
64K (8192-word ′ 8-bit) SRAM with OE, CE1, and CE2 Control Pins
64K (8192-word 8-bit) SRAM with OE, CE1, and CE2 Control Pins 64K的（8192字?8位）与光电，CE1上SRAM和控制引脚铈
|
SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
Sanyo Electric Co., Ltd.
|
