| PART |
Description |
Maker |
| PD46184185BF1-E40-EQ1 PD46184095BF1-E40-EQ1 PD4618 |
18M-BIT DDR II SRAM SEPARATE I/O 2-WORD BURST OPERATION
|
Renesas Electronics Corporation
|
| R1Q5A3618B R1Q5A3618BBG-33R R1Q5A3618BBG-40R R1Q5A |
36-Mbit DDRII SRAM 4-word Burst
|
Renesas Electronics Corporation
|
| R1QKA3618CB R1QKA3636CB R1QEA3636CB R1QEA3636CBG R |
36-Mbit DDRII SRAM 2-word Burst
|
Renesas Electronics Corporation
|
| R1QEA7236ABG R1QBA7236ABG R1QBA7218ABG R1QBA7236AB |
72-Mbit DDRII SRAM 2-word Burst
|
Renesas Electronics Corporation
|
| R1QLA3636CBB |
36-Mbit DDRII SRAM 2-word Burst
36-Mbit DDRII SRAM 2-word Burst
|
Renesas Electronics Corporation
|
| R1QJA4436RBG R1QJA4418RBG R1QBA4418RBG R1QBA4436RB |
144-Mbit DDRII SRAM 2-word Burst
144-Mbit DDRII SRAM 2-word Burst
|
Renesas Electronics Corporation
|
| MR27V1652E MR27V1652EMA MR27V1652ERA MR27V1652ETN |
1,048,576 - Word x 16-Bit or 2,097-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM
|
OKI electronic componets
|
| M5M4V16169DRT-15 M5M4V16169DTP |
16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM 16MCDRAM6米（100万字6位）6K的缓存内存（1024字由16位）的SRAM
|
Mitsubishi Electric, Corp.
|
| MS52C1162A |
65,536-Word × 16-Bit or 131,072-Word × 8-Bit STATIC RAM 1,048,576-Word × 16-Bit or 2,097,152-Word × 8-Bit One Time PROM(64k字6位或128k字位静态RAM 1M字6位或2M字OTPROM)
|
OKI SEMICONDUCTOR CO., LTD.
|
| K7D801871B K7D801871B-HC37 K7D801871B-HC35 K7D8018 |
256Kx36 & 512Kx18 SRAM
1Mx36 & 2Mx18 DDRII CIO b2 SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K7K1636T2C K7K1618T2C K7K1618T2C-EI330 K7K1618T2C- |
512Kx36 & 1Mx18 DDRII CIO b2 SRAM
1M X 18 DDR SRAM, 0.45 ns, PBGA165
|
Samsung semiconductor
|
