| PART |
Description |
Maker |
| QEB421 QEB421TR |
SURFACE MOUNT INFRARED LIGHT EMITTING DIODE SURFACE MOUNT INFRARED 2.4 mm, 1 ELEMENT, INFRARED LED, 880 nm
|
FAIRCHILD[Fairchild Semiconductor] Lite-On Technology, Corp.
|
| NTE30001 |
2.5 mm, 1 ELEMENT, INFRARED LED, 950 nm Infrared Emitting Diode Bi.Directional
|
NTE Electronics, Inc. NTE[NTE Electronics]
|
| LN59L |
GaAs Bi-directional Infrared Light Emitting Diodes 2.5 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
Panasonic, Corp.
|
| OP165D |
GaAs Plastic Infrared Emitting Diode(砷化镓塑料红外发光二极管,可替代K6500\OP163系列器件) 3 mm, 1 ELEMENT, INFRARED LED, 935 nm
|
Optek Technology
|
| TLN102 |
TOSHIBA INFRARED LED GaAs INFRARED EMITTER
|
TOSHIBA[Toshiba Semiconductor]
|
| Q62703-Q1090 SFH483E7800 SFH483 |
GaAlAs-IR-Lumineszenzdiode GaAlAs Infrared Emitter 1 ELEMENT, INFRARED LED, 880 nm GaAlAs-IR-Lumineszenzdiode GaAlAs Infrared Emitter 发动器,红外Lumineszenzdiode GaAlA红外发射 From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
| TLN105B07 TLN105BF |
INFRARED LED GAAS INFRARED EMITTER
|
Toshiba Corporation Toshiba Semiconductor
|
| MIE-114A1 114A1 |
Infrared Emitting Diodes (IRED) GaAlAs/GaAs HIGH POWER SIDE LOOK PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| MIE-334H4 334H4 |
GaAlAs T-1 PACKAGE INFRARED EMITTING DIODE 发动器的T 1包红外发光二极管 Infrared Emitting Diodes (IRED)
|
Unity Opto Technology Co., Ltd. UOT[Unity Opto Technology]
|
| MIE-144G1 144G1 |
Infrared Emitting Diodes (IRED) GaAs SIDE LOOK PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|