| PART |
Description |
Maker |
| TQ3M31 |
832-894 MHz & 1930-1990 MHz Dual Band LNA
From old datasheet system
Dual Band LNA: 2.8V, Cellular and PCS Band CDMA/AMPS LNA IC
|
TRIQUINT[TriQuint Semiconductor]
TriQuint Semiconductor,Inc.
|
| MAMDES0010 |
E-Series I/Q Modulator 1930 - 1990 MHz
|
MACOM[Tyco Electronics]
|
| AGR19060E AGR19060EF AGR19060EU |
60 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor
|
TriQuint Semiconductor
|
| MAFRIN0540 |
Single Junction Drop-In Circulator 1930 MHz-1990 MHz
|
M/A-COM Technology Solutions, Inc.
|
| 1920CD35 |
35 W, 25 V, 1930-1990 MHz common emitter transistor
|
GHz Technology
|
| MHW1910D |
MHW1910-1 1930-1990 MHz, 10 W RF Power LDMOS Amplifier - Archived
|
Motorola
|
| PTF180101 PTF180101S |
LDMOS RF Power Field Effect Transistor 10 W 1805-1880 MHz 1930-1990 MHz 10 W 2110-2170 MHz
LDMOS RF Power Field Effect Transistor 10 W, 1805-1880 MHz, 1930-1990 MHz 10 W, 2110-2170 MHz
LDMOS RF Power Field Effect Transistor 10 W/ 1805-1880 MHz/ 1930-1990 MHz 10 W/ 2110-2170 MHz
|
INFINEON[Infineon Technologies AG]
|
| PTFA191001E PTFA191001F |
Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1930-1990 MHz
|
Infineon Technologies AG
|
| MRF6S19100N |
MRF6S19100NBR1 1930-1990 MHz, 22 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs
|
MOTOROLA
|
| PTFA192401F |
Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 ?1990 MHz
|
Infineon Technologies AG
|
| PFM19030 PFM19030SM PFM19030F |
1930-1990 MHz, 30W, 2-Stage Power Module Enhancement-Mode Lateral MOSFETs
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| MRF7S19100N |
1930?1990 MHz, 29 W Avg., 28 V Single W?CDMA Lateral N?Channel RF Power MOSFETs
From old datasheet system
|
Motorola Semiconductor Products
|
