| PART |
Description |
Maker |
| VG26S17405J-5 VG26S17405J-6 VG26V17405J-5 VG26V174 |
4,194,304 x 4 - Bit CMOS EDO Dynamic RAM
4,194,304 x 4 - Bit CMOS Dynamic RAM
|
VML[Vanguard International Semiconductor]
|
| MD56V62400 MD56V62400H |
4-Bank x 4 /194 /304-Word x 4-Bit SYNCHRONOUS DYNAMIC RAM
4-Bank x 4,194,304-Word x 4-Bit SYNCHRONOUS DYNAMIC RAM 4，银行甲4194304字4位同步动态随机存储器
|
OKI SEMICONDUCTOR CO., LTD.
OKI electronic componets
|
| HM51W16400LS-5 HM51W16400LTS-5 HM51W16400S-6 HM51W |
4,194,304-word x 4-bit Dynamic RAM
|
HITACHI[Hitachi Semiconductor]
|
| HM5116400S-5 HM5116400S-7 HM5116400 HM5116400TS-5 |
4,194,304 - WORD X 4-BIT DYNAMIC RAM
|
HITACHI[Hitachi Semiconductor]
|
| TC5117400BST-70 TC5117400BST-60 TC5117400BSJ |
4,194,304 WORD X 4 BIT DYNAMIC RAM
|
Toshiba Semiconductor
|
| THM94000L-10 THM94000L-80 THM94000S THM94000S-10 T |
4/194/304 WORDS x 9 BIT DYNAMIC RAM MODULE
4,194,304 WORDS x 9 BIT DYNAMIC RAM MODULE
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
|
| M6MGT331S4BKT M6MGB331S4BKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT/524,288-WORD B
|
Renesas Electronics Corporation
|
| GM71C17400C GM71C17400CJ GM71C17400CLJ-5 GM71C1740 |
null4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM
|
Hynix Semiconductor
|
| 5164405A |
4,194,304-Word ′ 4-Bit Dynamic Random Access Memory
From old datasheet system
|
hitachi
|
| 5164400A |
4,194,304-Word ′ 5-Bit Dynamic Random Access Memory
From old datasheet system
|
hitachi
|
| MSM5116400B |
4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
|
OKI electronic components
OKI[OKI electronic componets]
|
