| PART |
Description |
Maker |
| NE71083-07 NE710 NE71000 NE71083-06 NE71083-08 NE7 |
90 GHz, low noise Ku-K band GaAs MESFET
LOW NOISE Ku-K BAND GaAs MESFET 低噪声谷K波段GaAs MESFET器件
|
NEC Corp.
NEC, Corp.
|
| CGY0819 |
MESFET PA
|
Infineon
|
| LMA110 LMA110A |
.5-6 GHz MESFET Amplifier
|
FILTRONIC[Filtronic Compound Semiconductors]
|
| 2SJ211 2SJ211-T2B 2SJ211-L 2SJ211-T1B |
P-CHANNEL MOS FET FOR SWITCHING
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0621-7 00; No. of Positions: 8; Connector Type: Panel
|
NEC[NEC]
NEC Corp.
|
| NE650103M-A |
10 W L & S-BAND POWER GaAs MESFET
|
California Eastern Laboratories
|
| CRF24060D |
60 W SiC RF Power MESFET Die
|
CREE[Cree, Inc]
|
| ND4131-3D |
2 W, 4 V, C-band power GaAs MESFET
|
NEC
|
| VSMP1206 |
Z-Based Bulk Metal Foil Technology Discrete High Precision Surface Mount Chip Resistor High Power - Excellent Long Term Stabilty Z -基大块金属箔技术离散高精度表面贴装芯片电阻，高功率-卓越的长期稳
Resistors, fixed discrete
|
Vishay Intertechnology, Inc.
VISAY[Vishay Siliconix]
|
| 2SJ226 |
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0503-0 00; No. of Positions: 8; Connector Type: Wire
Very High-Speed Switching Applications
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| NE650049600 |
L&S BAND MEDIUM POWER GaAs MESFET
|
NEC
|
| NEZ1414-2E |
KU BAND, GaAs, N-CHANNEL, RF POWER, MESFET
|
NEC, Corp.
|
