| PART |
Description |
Maker |
| 595D474X9025T2T 595D157X9016R2T 595D225X9020A2T |
KONDENSATOR TANTAL SMD 0.47UF 25V KONDENSATOR钽贴.47UF 25V
KONDENSATOR TANTAL SMD 150UF 16V KONDENSATOR钽贴50UF 16V
KONDENSATOR TANTAL SMD 2.2UF 20V KONDENSATOR钽贴.2uF0V
|
Vishay Intertechnology, Inc.
|
| T499 T499_1 |
High Temperature ( 175) Tantalum SMT Capaci
|
KEMET[Kemet Corporation]
|
| SHD125122 SHD125122P SHD125122D SHD125122N |
HERMETIC POWER SCHOTTKY RECTIFIER 175∑C Maximum Operation Temperature 15 A, SILICON, RECTIFIER DIODE, TO-254AA
HERMETIC POWER SCHOTTKY RECTIFIER 175°C Maximum Operation Temperature
|
Sensitron Semiconductor
SENSITRON[Sensitron]
|
| SHD12562208 |
HERMETIC POWER SCHOTTKY RECTIFIER 175°C Maximum Operation Temperature
|
Sensitron
|
| SHD12563508 |
HERMETIC POWER SCHOTTKY RECTIFIER 175°C Maximum Operation Temperature
|
Sensitron
|
| SHD12542308 |
HERMETIC POWER SCHOTTKY RECTIFIER 175°C Maximum Operation Temperature
|
Sensitron
|
| OM4201ST |
SILICON SCHOTTKY RECTIFIER Ultra Low Reverse Leakage 175°C Operating Temperature
SILICON SCHOTTKY RECTIFIER Ultra Low Reverse Leakage 175∑C Operating Temperature
|
SENSITRON[Sensitron]
|
| SHD126422 |
SILICON SCHOTTKY RECTIFIER Ultra Low Reverse Leakage 175?C Operating Temperature
|
Semtech Corporation
|
| A3195EU A3195LLT 3195 A3195LU A3195 A3195ELT |
PROTECTED, HIGH-TEMPERATURE, HALL-EFFECT LATCH WITH ACTIVE PULL-DOWN 保护，高温，霍尔效应锁存主动下拉
SENSOR IC CAC ANALOG OUT 8-DIP
PROTECTED. HIGH-TEMPERATURE. HALL-EFFECT LATCH WITH ACTIVE PULL-DOWN
Protected,High-Temperature,Oper-Collector Hall-Effect Latch(保护型，工作于高温，霍尔效应锁存器（
PROTECTED/ HIGH-TEMPERATURE/ HALL-EFFECT LATCH WITH ACTIVE PULL-DOWN
PROTECTED HIGH-TEMPERATURE HALL-EFFECT LATCH WITH ACTIVE PULL-DOWN
From old datasheet system
|
Allegro MicroSystems, Inc.
ALLEGRO[Allegro MicroSystems]
|
| W0603HT-01-100R-G W0603HT-01-100R-J W1206HT-01-100 |
High Temperature TaNFilm㈢ Chip Resistors
High Temperature TaNFilm垄莽 Chip Resistors
High Temperature TaNFilm? Chip Resistors
High Temperature TaNFilmChip Resistors RESISTOR, METAL FILM, 0.1 W, 1 %, 100 ppm, 100 ohm, SURFACE MOUNT, 0805
High Temperature TaNFilmChip Resistors RESISTOR, METAL FILM, 0.0625 W, 5 %, 100 ppm, 100 ohm, SURFACE MOUNT, 0603
High Temperature TaNFilmChip Resistors RESISTOR, METAL FILM, 0.125 W, 2 %, 100 ppm, 100 ohm, SURFACE MOUNT, 1206
|
Welwyn Components Limited
TT Electronics / Welwyn
Welwyn Components, Ltd.
Welwyn Components Limit...
|
| APT20M11JVR |
Power MOSFET; Package: ISOTOP®; ID (A): 175; RDS(on) (Ohms): 0.011; BVDSS (V): 200; 175 A, 200 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 175A 0.011 Ohm
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
