| PART |
Description |
Maker |
| SUM16N20-125 |
N-Channel 200-V (D-S) 175C MOSFET N沟道200 -五（副）175C MOSFET
|
Vishay Intertechnology,Inc.
Vishay Intertechnology, Inc.
|
| SUD19N20-90 |
N-Channel 200-V (D-S) 175 °C MOSFET
N-Channel 200-V (D-S) 175C MOSFET
|
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| SUP57N20-33 |
N-Channel MOSFET
N-Channel 200-V (D-S) 175C MOSFET
|
VISAY[Vishay Siliconix]
|
| APT20M38BVR APT20M38BVRG |
Power MOSFET; Package: TO-247 [B]; ID (A): 67; RDS(on) (Ohms): 0.038; BVDSS (V): 200; 67 A, 200 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 67A 0.038 Ohm
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| SUP75P05-08 SUB75P05-08 |
P-Channel 55-V (D-S), 175C MOSFET P通道55 - V（下局副局长）75C MOSFET
P-Channel MOSFET
P-Channel 55-V (D-S) 175C MOSFET
|
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| SUD50N03-07-E3 SUD50N03-07 |
N-Channel 30-V (D-S) 175C MOSFET N沟道30 V的（副）175C MOSFET
|
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| APT5020BVR |
POWER MOS V 500V 26A 0.200 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT5020BVFR |
POWER MOS V 500V 26A 0.200 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| TPC8405 |
Field Effect Transistor Silicon N, P Channel MOS Type (P Channel U−MOS IV/N Channel U-MOS III)
|
Toshiba Semiconductor
|
| UPA675T UPA675T-T1 UPA675T-T2 UPA675T-A |
100 mA, 16 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
N-channel enhancement type MOS FET
|
NEC
|
| SUP85N04-03 SUB85N04-03 |
N-Channel 40-V (D-S) 175C MOSFET
|
VISAY[Vishay Siliconix]
|
