| PART |
Description |
Maker |
| MTB1N100E_D ON2398 MTB1N100E |
TMOS POWER FET 1.0 AMPERES 1000 VOLTS 1 A, 1000 V, 9 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
|
Motorola Mobility Holdings, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
|
| SBTC-2-10-75_75L SBTC-2-10-75 SBTC-2-10-75L SBTC-2 |
Power Splitter/Combiners 2 Way-0??75蟹 10 to 1000 MHz
Power Splitter/Combiners 2 Way-075з 10 to 1000 MHz 功分合路2路，0Σ75з101000兆赫
Power Splitter/Combiners 2 Way-0° 75 10 to 1000 MHz
Power Splitter/Combiners 2 Way-0∑ 75з 10 to 1000 MHz
Power Splitter/Combiners 2 Way-0 75 10 to 1000 MHz
|
MINI[Mini-Circuits]
|
| 2N6533 2N6532 2N6530 2N6531 |
8 A N-P-N darlington power transistor. 120 V. 60 W. Gain of 1000 at 3 A.
8 A N-P-N darlington power transistor. 100 V. 60 W. Gain of 1000 at 5 A.
8 A N-P-N darlington power transistor. 100 V. 60 W. Gain of 500 at 3 A.
8 A N-P-N darlington power transistor. 80 V. 60 W. Gain of 1000 at 5 A.
8-AMPERE N-P-N DARLINGTON POWER TRANSISTORS
From old datasheet system
|
General Electric Solid State
ETC[ETC]
|
| TPR1000 |
Transponder/ 1090 MHz, Class C, Common Base, Pulsed; P(out) (W): 1000; P(in) (W): 250; Gain (dB): 6; Vcc (V): 50; Pulse Width (µsec): 10; Duty Cycle (%): 1; Case Style: 55KV-1 L BAND, Si, NPN, RF POWER TRANSISTOR
1000 Watts, 45 Volts, Pulsed Avionics 1090 MHz
high power COMMON BASE bipolar transistor.
|
Microsemi, Corp.
ETC[ETC]
GHZTECH[GHz Technology]
List of Unclassifed Manufacturers
|
| ZA2CS-10-20W |
High Power Combiner 2 Way-0 50楼? 900 to 1000 MHz
High Power Combiner 2 Way-0 50Ω 900 to 1000 MHz
|
Mini-Circuits
|
| KAI-1020-CBA-FD-BA |
IMAGE SENSOR-CCD, 1000(H) X 1000(V) PIXEL, 500mV, SQUARE, THROUGH HOLE MOUNT
|
KODAK IMAGE SENSOR SOLUTIONS
|
| APT1001R6SFLL APT1001R6BFLL APT1001R6BFLLG |
8 A, 1000 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD TO-247, 3 PIN
POWER MOS 7 R FREDFET
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| APT10021JLL_04 APT10021JLL APT10021JLL04 |
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
37 A, 1000 V, 0.21 ohm, N-CHANNEL, Si, POWER, MOSFET ISOTOP-4
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Microsemi, Corp.
|
| APT10021JFLL_04 APT10021JFLL APT10021JFLL04 |
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
37 A, 1000 V, 0.21 ohm, N-CHANNEL, Si, POWER, MOSFET ISOTOP-4
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Microsemi, Corp.
|
| 0510-50A |
50 W, 28 V, 500-1000 MHz common emitter transistor
50 Watts, 28 Volts, Class AB Defcom 500 - 1000 MHz
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3.7A I(C) | SOT-324VAR
晶体管|晶体管|叩| 60V的五（巴西）总裁| 3.7AI（丙）|的SOT - 324VAR
500-1000 MHz, Class AB, Common Emitter; fO (MHz): 1000; P(out) (W): 50; P(in) (W): 10; Gain (dB): 7; Vcc (V): 28; ICQ (A): 0.1; Case Style: 55AV-2
|
GHZTECH[GHz Technology]
MICROSEMI POWER PRODUCTS GROUP
|
| PA1215 |
800-1000 MHz. Low Noise High Dynamic Range Linear Amplifier
800 MHz - 1000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
M24308/4-2F
|
Tyco Electronics
|
