| PART |
Description |
Maker |
| STP13NK60Z STP13NK60ZFP STB13NK60 STB13NK60Z STB13 |
N-CHANNEL 600V-0.48ohm-13A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH?Power MOSFET
N-CHANNEL 600V-0.48ohm-13A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH⑩Power MOSFET
N-CHANNEL 600V-0.48ohm-13A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH?┬ower MOSFET
N-CHANNEL 600V-0.48ohm-13A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESHPower MOSFET
N-CHANNEL 600V - 0.48 OHM - 13A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFET
N-CHANNEL 600V - 0.48 OHM - 13A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| AOW12N60 AOWF12N60 |
600V,12A N-Channel MOSFET
|
Alpha & Omega Semiconductors
|
| IRFR9210N IRFRU9120N IRFU9120N FR9120N |
P Channel Surface Mount HEXFET Power MOSFET(P娌??琛ㄨ创??EXFET???MOS?烘?搴??)
Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.6A) 功率MOSFET（减振钢板基本\u003d- 100V的，的Rds（on）\u003d 0.48ohm，身份证\u003d- 6.6A
P Channel Straight Lead HEXFET Power MOSFET(P沟道HEXFET功率MOS场效应管) P通道直铅HEXFET功率MOSFET的性（P沟道的HEXFET功率马鞍山场效应管）
P Channel Straight Lead HEXFET Power MOSFET(P娌??HEXFET???MOS?烘?搴??)
|
IRF
International Rectifier, Corp.
|
| IRG4BC30W |
600V Warp 60-150 kHz Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A)
|
IRF[International Rectifier]
|
| STD12NE06L STD12NE06L-1 |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 12A I(D) | TO-251AA 晶体管| MOSFET的| N沟道| 60V的五（巴西）直| 12A条（丁）|51AA
N - CHANNEL 60V - 0.09ohm- 12A TO-251/TO-252 STripFET POWER MOSFET
N-CHANNEL POWER MOSFET
|
California Eastern Laboratories, Inc.
STMicroelectronics
ST Microelectronics
|
| U12C30 U12C40 U12C50 U12C60 |
POWER RECTIFIERS(12A/300-600V)
POWER RECTIFIERS(12A,300-600V)
|
MOSPEC SEMICONDUCTOR CORP.
MOSPEC[Mospec Semiconductor]
|
| BCR12PM-12LDB00 BCR12PM-12LDA8B00 BCR12PM-12LD-15 |
600V - 12A - Triac Medium Power Use
|
Renesas Electronics Corporation
|
| RJH60D2DPP-E0-15 |
600V - 12A - IGBT Application: Inverter
|
Renesas Electronics Corporation
|
| RJH60D2DPP-M0-15 |
600V - 12A - IGBT Application: Inverter
|
Renesas Electronics Corporation
|
| SSU2N60B SSR2N60B SSR2N60 SSU2N60BTU SSR2N60BTF SS |
600V N-Channel MOSFET
600V N-Channel MOSFET 1.8 A, 600 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
600V N-Channel B-FET / Substitute of SSU2N60A
600V N-Channel B-FET / Substitute of SSR2N60A
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| IRGBC30U |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=12A)
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V @Vge=15V Ic=12A)
|
IRF[International Rectifier]
|
