| PART |
Description |
Maker |
| FAT-800-40 |
INFRARED HIGH POWER LED ARRAY
|
Roithner LaserTechnik GmbH
|
| FAT-870-40 |
INFRARED HIGH POWER LED ARRAY
|
Roithner LaserTechnik GmbH
|
| AS098Q1200W |
High Power Stacked Infrared Laser Diode Array
|
Roithner LaserTechnik GmbH
|
| AS081Q3000W |
High Power Stacked Infrared Laser Diode Array
|
Roithner LaserTechnik GmbH
|
| AS098C40W |
High Power Stacked Infrared Laser Diode Array
|
Roithner LaserTechnik G...
|
| ELA-920-22X60-2-6 ELA-920-22X60-12-6 |
Infrared LED - Array
|
Roithner LaserTechnik GmbH
|
| MIE-514H4 514H4 |
GaAlAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE 大功率的GaAIAs的T 1 3 / 4包装红外发光二极
Infrared Emitting Diodes (IRED)
|
Unity Opto Technology Co., Ltd.
UOT[Unity Opto Technology]
|
| MIE-514A4 514A4 |
Infrared Emitting Diodes (IRED)
AlGaAs/GaAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| HSDL-3202 |
HSDL-3202#001 · Infrared IrDA 1.2 Compliant 115.2Kb/s 3V Transceiver
IrDA㈢ Data 1.3 Low Power Compliant 115.2 Kb/s Infrared Transceiver
|
Agilent (Hewlett-Packard)
Agilent(Hewlett-Packard)
|
| 2SC5041 |
7 A, 800 V, NPN, Si, POWER TRANSISTOR
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications
|
SANYO SEMICONDUCTOR CO LTD
Sanyo Semicon Device
|
| SE1470 SE1470-003L |
1.57 mm, 1 ELEMENT, INFRARED LED, 880 nm
AlGaAs Infrared Emitting Diode
|
Honeywell Accelerometers
|
