| PART |
Description |
Maker |
| SLD-2000 |
12 Watt Discrete LDMOS FET-Bare Die
|
sirenza.com
SIRENZA[SIRENZA MICRODEVICES]
|
| SLD-1000 |
4 Watt Discrete LDMOS FET-Bare Die
|
sirenza.com
SIRENZA[SIRENZA MICRODEVICES]
|
| SLD-1083CZ |
4 Watt Discrete LDMOS FET in Ceramic Package
|
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
ETC
|
| TGF2023-2-02 TGF2023-2-02-15 |
12 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
| TGF2955 |
40 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
| TGF2023-10-15 |
50 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
| SSM6H19NU |
Multi-chip discrete device (N-ch SBD)
|
TOSHIBA
|
| W98M964001EUX W98M9640 |
Semiconductor Discrete Device, P-Channel Power MOS Field Effect Transistor
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| MHVIC2115R2 |
MHVIC2115R2 2.2 GHz, 26 V, 23/34 dBm W-CDMA RF LDMOS Integrated Circuit
RF LDMOS Wideband Integrated Power Amplifier
|
MOTOROLA[Motorola, Inc]
|
| MPSW51_D MPSW51A ON2354 MPSW51 |
*Motorola Preferred Device
One Watt High Current Transistors(PNP Silicon)
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
