| PART |
Description |
Maker |
| SI3016 |
3.3 V ENHANCED GLOBAL DIRECT ACCESS ARRANGEMENT
|
ETC[ETC]
|
| SI2400 SI2400-BS SI2400-KS |
V.22BIS ISOMODEMWITH INTEGRATED GLOBAL DAA
V.22BIS ISOMODEM WITH INTEGRATED GLOBAL DAA
|
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
|
| LPSG60-1MI LPSG30-3MI LPSG30-2MI LPSG30-1MI LPSG10 |
LPSG Series Global Pro Fuseholders
LPSG Series Global Pro⑩ Fuseholders
|
Littelfuse
|
| HYMR16416 HYMR16418H-840 |
32Mx16|2.5V|40|-|Direct RDRAM - 64MB RIMM
64M X 18 DIRECT RAMBUS DRAM MODULE, 40 ns, DMA184 RIMM-184
|
Hynix Semiconductor, Inc.
|
| K4R441869B-NMCK7 K4R441869B-NMCK8 K4R271669B-NMCG6 |
256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.
256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz.
K4R271669B:Direct RDRAMData Sheet
256K x 16/18 bit x 32s banks Direct RDRAMTM
256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| 2778B 2778A |
MODEM MAGNETICS Global V.90 and V.34 Transformers
|
BEL[Bel Fuse Inc.]
|
| GLC50-12 GLC50-15 GLC50-24 GLC50-5 GLC50-28 GLC50- |
50 WATT GLOBAL PERFORMANCE SWITCHERS
|
SL Power Electronics
|
| YC248-JR-0733RL |
ORDERING INFORMATION - GLOBAL PART NUMBER
|
YAGEO Corporation
|
| SI3010-F-FS SI2401-FS SI2401 |
V.22BIS ISOMODEM㈢ WITH INTEGRATED GLOBAL DAA
|
Silicon Laboratories
|
| GPFM115 |
115 Watt Global Performance Switchers
|
SL Power Electronics
|
