| PART |
Description |
Maker |
| SG15N12DP SG15N12P |
Discrete IGBTs
|
Sirectifier Global Corp.
Sirectifier Semiconductors
|
| SG50N06T SG50N06DT |
Discrete IGBTs
|
Sirectifier Global Corp.
Sirectifier Semiconductors
ETC[ETC]
List of Unclassifed Manufacturers
|
| SG23N06DT SG23N06T |
Discrete IGBTs
|
Sirectifier Global Corp.
Sirectifier Semiconductors
|
| SG75S12S |
Discrete IGBTs
|
Sirectifier Semiconductors
|
| SG45N12T |
Discrete IGBTs
|
Sirectifier Semiconduct...
Sirectifier Semiconductors
Sirectifier Global Corp.
|
| SG12N06DP SG12N06P |
Discrete IGBTs
|
Sirectifier Semiconductors
Sirectifier Global Corp.
|
| GT40QR21 |
Discrete IGBTs Silicon N-Channel IGBT
|
Toshiba Semiconductor
|
| IXBT42N170A IXBH42N170A |
Discrete IGBTs
BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| IXBH9N140G IXBH9N160G |
Discrete IGBTs
High Voltage BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| HGTD8P50G1S HGTD8P50G1 HGTP8P50G1 |
8A, 500V P-Channel IGBTs
8A 500V P-Channel IGBTs
Mechanism, 2-inch w/front paper feed and partial cutter
8A/ 500V P-Channel IGBTs
|
http://
INTERSIL[Intersil Corporation]
|
| IRG4BC40K |
Insulated Gate Bipolar Transistors (IGBTs)(短路额定超快速绝缘栅型双极型晶体 绝缘门双极晶体管IGBTs）（短路额定超快速绝缘栅型双极型晶体管）
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.1V, @Vge=15V, Ic=25A)
600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| APT33GF120B2RD APT33GF120LRD |
Fast IGBT & FRED 1200V 52A
The Fast IGBT is a new generation of high voltage power IGBTs.
The Fast IGBT⑩ is a new generation of high voltage power IGBTs.
The Fast IGBTis a new generation of high voltage power IGBTs.
|
Advanced Power Technology Ltd.
|
