| PART |
Description |
Maker |
| MBR10100CT |
10 Amp Schott ky Barrier Rectifier 80-100 Volts
|
Micro Commercial Components
|
| MBR1040CT |
10 Am p Schott ky Barrier Rectifier 30-60 Volts
|
Micro Commercial Compon...
|
| MMFT960T106 MMFT960T1 MMFT960T1G |
Power MOSFET 300 mA, 60 Volts; Package: SOT-223 (TO-261) 4 LEAD; No of Pins: 4; Container: Tape and Reel; Qty per Container: 1000 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA
Power MOSFET 300 mA, 60 Volts N−Channel SOT−223
|
ON Semiconductor
|
| 1214-300M |
L-Band 1200-1400 MHz, Class C, Common Base-Pulsed; P(out) (W): 300; P(in) (W): 40; Gain (dB): 8.75; Vcc (V): 40; Pulse Width (µsec): 150; Duty Cycle (%): 10; Case Style: 55ST-1 L BAND, Si, NPN, RF POWER TRANSISTOR
300 Watts - 40 Volts, 150ms, 10% Radar 1200 - 1400 MHz
|
Microsemi, Corp.
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| MMFT2955E MMFT2955E-D MMFT2955ET1 MMFT2955ET1G MMF |
Power MOSFET 1 Amp, 60 Volts P-Channel(1A锛?0V锛?娌??澧?己?????OS?烘?搴??)
Power MOSFET 1 Amp, 60 Volts P-Channel(1A60V，P沟道增强型功率MOS场效应管)
Power MOSFET 1 Amp, 60 Volts P-Channel SOT-223
|
ON Semiconductor
|
| SDR647CTS1 SDR647CTS1S SDR647CTS1TX SDR647CTS1TXV |
50 AMP 300-700 Volts 35 nsec Centertap Rectifier
|
Solid States Devices, Inc
Solid States Devices, I...
|
| SDR943/61 |
40 AMP ULTRA FAST RECOVERY RECTIFIER 300- 600 VOLTS
|
Solid States Devices, Inc.
|
| QRC0630T30 QRD0630T30 QRF0630T30 QR0630T30 |
Fast Recovery Diode Module (300 Amp/600 Volts)
|
http://
POWEREX[Powerex Power Semiconductors]
|
| SDR943_61 SDR943-61 |
40 AMP ULTRA FAST RECOVERY RECTIFIER 300- 600 VOLTS
|
SSDI[Solid States Devices, Inc]
|
| SDR953CT/3 SDR955CT/3 SDR954CT/3 |
100 AMP 300 - 500 VOLTS 35 nsec HYPER FAST COMMONCATHODE CENTERTAP RECTIFIER
|
Solid States Devices, Inc.
|
| SFA30PJE SFA10PJE SFA20PJE |
6 AMP 100-300 VOLTS 40 nsec HYPER FAST POSITIVE CENTERTAP RECTIFIER 6安培100-300伏特0纳秒超快速整流阳性CENTERTAP
From old datasheet system
|
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
|
| ARF466FL ARF466FL10 |
RF MOSFET for 100-300 Volt Operation; P(out) (W): 300; fO (MHz): 45; VDD (V): 200; BVDSS (V): 1000; RqJC (ºC/Watt): 0.27; Case Style: T2; COO: A-E VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
RF POWER MOSFETs N-CHANNEL ENHANCEMENT MODE
|
Microsemi, Corp.
Microsemi Corporation
|
