| PART |
Description |
Maker |
| 30KW258A 30KW168 30KW168A 30KW216 30KW240 30KW240A |
258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
270.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
|
MDE Semiconductor
|
| S13003A-D |
Bipolar Junction Transistor
|
Shenzhen Jingdao Electr...
|
| JANSF2N5153U3 |
BJT( BiPolar Junction Transistor)
|
Microsemi
|
| PH2729-130M |
Radar Pulsed Power Transistor 130W, 2.7-2.9 GHz, 100μs Pulse, 10% Duty
Radar Pulsed Power Transistor 130W, 2.7-2.9 GHz, 100楼矛s Pulse, 10% Duty
|
M/A-COM Technology Solutions, Inc.
|
| ZWQ80-5222 ZWQ80-5224 ZWQ80-5225 ZWQ130-5222 ZWQ13 |
Quad output 80W ~ 130W
Quad output 80W ~ 130W 四路输出80130
|
LAMBDA[DENSEI-LAMBDA]
Rochester Electronics, LLC
|
| MMBT2131T3 MMBT2131T1 ON2108 |
GENERAL PURPOSE TRANSISTORS
From old datasheet system
PNP Bipolar Junction Transistor
|
ONSEMI[ON Semiconductor]
|
| VLT130-1101 VLT130-1100 |
130W single and quad output AC/DC Power Supplies
|
EOS
|
| MPU130-105 MPU130-108 |
130W Desk Top Switching Power Supplies For Medical Equipment
|
MPS Industries, Inc.
|
| JANSM2N2904 JANSM2N2905AL 2N2904E3 JANSR2N2904 JAN |
BJT( BiPolar Junction Transistor)
PNP Transistor
|
Microsemi
|
| MMBT2131T1-D |
General Purpose Transistors PNP Bipolar Junction Transistor (Complementary NPN Device: MMBT2132T1/T3) NOTE: Voltage and Current are negative for the PNP Transistor.
|
ON Semiconductor
|
| EC3A01H |
N-Channel Silicon Junction FET - Electret Condenser Microphone Applications
Junction FETs
|
Sanyo Electric Co.,Ltd.
Sanyo Semicon Device
|
