| PART |
Description |
Maker |
| 2SC2335-15 |
SILICON POWER TRANSISTO
|
Renesas Electronics Corporation
|
| BFP540FESD |
NPN Silicon RF Transisto NPN硅射频Transisto
|
INFINEON[Infineon Technologies AG]
|
| HAT1026R-EL-E HAT1026R |
7 A, 30 V, 0.065 ohm, P-CHANNEL, Si, POWER, MOSFET 3.95 X 4.90 MM, PLASTIC, FP-8DAV, SOP-8
Silicon P Channel Power MOSFET High Speed Power Switching
|
Renesas Electronics, Corp.
Renesas Electronics Corporation
|
| 2SK3781-01R |
DIODE SCHOTTKY SINGLE 25V 200mW 0.33V-vf 200mA-IFM 2mA-IF 0.5uA-IR SOD-323 3K/REEL 73 A, 200 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET
N-CHANNEL SILICON POWER MOSFET
|
Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
|
| C3M0120100J |
Silicon Carbide Power MOSFET C3M MOSFET Technology
|
Cree, Inc
|
| 2SK3588-01L 2SK3588-01S 2SK3588-01SJ |
N-CHANNEL SILICON POWER MOSFET 73 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
|
| 2SK1008-01 |
4.5 A, 500 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-CHANNEL SILICON POWER MOSFET
|
FUJI[Fuji Electric]
|
| 2SK3597-01 |
POWER MOSFET N-CHANNEL SILICON POWER MOSFET
|
Fuji Electric
SANYO[Sanyo Semicon Device]
|
| IRFR6215PBF IRFU6215PBF IRFR6215TR IRFR6215TRL IRF |
Advanced Process Technology
HEXFET㈢ Power MOSFET
HEXFET? Power MOSFET
13 A, 150 V, 0.295 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA
175°C Operating Temperature
|
International Rectifier
|
| 2SK3556-01S 2SK3556 2SK3556-01L 2SK3556-01SJ |
N-CHANNEL SILICON POWER MOSFET 37 A, 250 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Fuji Electric Holdings Co., Ltd.
|
|
