| PART |
Description |
Maker |
| R2066 |
PHOTOMULTlPLlER TUBE
|
Hamamatsu Photonics
HAMAMATSU[Hamamatsu Corporation]
|
| R2248 |
PHOTOMULTlPLlER TUBE
|
Hamamatsu Photonics
HAMAMATSU[Hamamatsu Corporation]
|
| R7459 |
PHOTOMULTlPLlER TUBE
|
Hamamatsu Corporation
|
| R877-01 R877 |
PHOTOMULTlPLlER TUBES
|
Hamamatsu Photonics
HAMAMATSU[Hamamatsu Corporation]
|
| R5611-01 R5611 |
PHOTOMULTlPLlER TUBES
|
HAMAMATSU[Hamamatsu Corporation]
|
| EG3012 |
Power MOS tube / IGBT gate driver chip tube
|
EGmicro
|
| EG3013 |
Power MOS tube / IGBT gate driver chip tube
|
EGmicro
|
| P4C163L-45DMB P4C163L-25LC P4C163L-35LC P4C163L-25 |
3A Dual MOSFET Drvr, -40C to 85C, 8-PDIP, TUBE
3A Dual MOSFET Drvr, -40C to 85C, 16-SOIC 300mil, TUBE
3A Dual MOSFET Drvr, -40C to 125C, 8-DFN, T/R
x9 SRAM
3A Dual MOSFET Drvr, 0C to 70C, 16-SOIC 300mil, TUBE
3A Dual MOSFET Drvr, -55C to 125C, 8-CERDIP 300mil, TUBE
1.5A Dual H-Speed MOSFET Drvr, -25C to 85C, 8-CERDIP 300mil, TUBE
1.5A Floating Load Drvr, -40C to 85C, 8-PDIP, TUBE
9A SNGL MOSFET DRVR, -40C to 125C, 8-DFN, T/R X9热卖静态存储器
|
Microsemi, Corp.
|
| R636-10 R758-10 R636-10-15 |
UV to Near IR (R636?0:185 to 930 nm, R758?0:160 to 930nm) Spectral Response 28mm(1-1/8 Inch) Diameter, GaAs(Cs) Photocathode, 9-stage,Side-On Type
PHOTOMULTlPLlER TUBES
|
HAMAMATSU[Hamamatsu Corporation]
Hamamatsu Photonics
|
| 2SA1432 |
High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications
|
Toshiba Semiconductor
|
| 2SC3515 |
Transistor Silicon NPN Triple Diffused Type (PCT process) HIGH Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications
|
TOSHIBA
|
| 2SA1384 |
Transistor Silicon PNP Triple Diffused Type (PCT process) HIGH Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications
|
TOSHIBA
|
|
