| PART |
Description |
Maker |
| A29L800UG-90U A29L800UV-90U A29L800TM-90 A29L800TM |
240 x 128 pixel format, LED or EL Backlight 100万8 16位为512k ×电压的CMOS 3.0只，引导扇区闪存
1M X 8 Bit / 512K X 16 Bit CMOS 3.0 Volt-only, Boot Sector Flash Memory 100万8 16位为512k ×电压的CMOS 3.0只，引导扇区闪存
128 x 64 pixel format, LED Backlight available
Replaced by PT78ST133 : 3.3Vout 1.5A Wide Input Positive Step-Down ISR 3-SIP MODULE -40 to 85
Function Generator Carrying Case RoHS Compliant: NA
640 x 480 pixel format, CCFL Backlight
|
http://
AMIC Technology, Corp.
AMIC Technology Corporation
|
| BAS19-T1 BAS19-T3 BAS19 BAS21-T3 BAS20-T1 BAS20-T3 |
SURFACE MOUNT FAST SWITCHING DIODE 表面贴装快速开关二极管
128 x 128 pixel format, LED or EL Backlight available
|
Won-Top Electronics Co., Ltd.
WTE[Won-Top Electronics]
|
| HEDM-6500-T08 HEDM-6500-U13 HEDM-6500-T06 HEDM-650 |
128 x 128 pixel format, LED or EL Backlight available
Large Diameter (56 mm), Housed Two and Three Channel Optical Enco 大口径（56毫米），外套二及中三通道光学恩科
240 x 64 pixel format, CFL, LED, or EL Backlight available 大口径（56毫米），外套二及中三通道光学恩科
SINGLE, 2 CHANNELS, ROTARY OPTICAL POSITION ENCODER
|
Agilent(Hewlett-Packard)
Agilent Technologies, Inc.
NXP Semiconductors N.V.
AGILENT TECHNOLOGIES INC
Agilent(Hewlett-Packard...
|
| Q67050-T0009 BSP300 Q67050-T0017 |
SIPMOS Small-Signal Transistor (N channel Enhancement mode Avalanche rated)
128 x 128 pixel format, LED or EL Backlight available
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| BAS70-T1 Q62702A1173 BAS70T1 BAS70 Q62702A674 |
128 x 128 pixel format, LED or EL Backlight available
HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor General-purpose diodes for high-speed switching)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BAS70-04T-7 BAS70-05T-7 BAS70-06T-7 BAS70T-7 BAS70 |
SURFACE MOUNT SCHOTTKY BARRIER DIODE 0.07 A, 70 V, 2 ELEMENT, SILICON, SIGNAL DIODE
128 x 128 pixel format, LED or EL Backlight available 表面贴装肖特基二极管
CSCA-A Series Hall-effect based, open-loop current sensor, Gallant connector, 200 A rms nominal, ±600 A range
|
http://
DIODES[Diodes Incorporated]
Diodes Inc.
Diodes, Inc.
|
| A29800 A29800UV-90 A29800UM-90 A29800TM-90 A29800T |
240 x 128 pixel format, LED or EL Backlight 1024K × 8 16位为512k ×电压的CMOS 5.0只，引导扇区闪存
1024K X 8 Bit / 512K X 16 Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory 1024K × 8 16位为512k ×电压的CMOS 5.0只，引导扇区闪存
PULSER PROBE 1024K × 8 16位为512k ×电压的CMOS 5.0只，引导扇区闪存
Aerials (Antennas); Bandwidth Max:500MHz; For Use With:Hand-Held Spectrum Analyzer; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No RoHS Compliant: No 1024K × 8 16位为512k ×电压的CMOS 5.0只，引导扇区闪存
Dipole Antenna; Bandwidth Max:2.2GHz; For Use With:Hand-Held Spectrum Analyzer; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No RoHS Compliant: No 1024K × 8 16位为512k ×电压的CMOS 5.0只，引导扇区闪存
240 x 128 pixel format, CFL Backlight with power harness
128 x 64 pixel format, LED Backlight available
|
AMIC Technology, Corp.
AMIC Technology Corporation
|
| M2S56D20TP-75 M2V56D30TP-75 M2V56D20TP-75 M2S56D30 |
128 x 64 pixel format, LED Backlight available
256M Double Data Rate Synchronous DRAM
|
Mitsubishi Electric Corporation
|
| QM30TX-H |
240 x 128 pixel format, LED or EL Backlight
MEDIUM POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| M2S12D20TP M2S12D20TP-75 M2S12D30TP M2S12D30TP-75L |
512M Double Data Rate Synchronous DRAM
128 x 64 pixel format, LED Backlight available
|
Mitsubishi Electric Corporation
|
| RM10TN-2H |
128 x 64 pixel format, LED Backlight available
Three Phase Diode Bridge Module (7 Amperes/1600 Volts)
|
POWEREX[Powerex Power Semiconductors]
|
| CAT24C00JITE13 CAT24C00LETE13 CAT24C00LITE13 CAT24 |
320 x 240 pixel format, Chip-On-Glass Technology
CONNECTOR ACCESSORY
From old datasheet system
128-bit Serial EEPROM
128-bit, 100 kHz @ 1.8 V & 400 kHz @ 5.0 V, 5-pin SOT23 Package
|
Catalyst Semiconductor
|
