| PART |
Description |
Maker |
| CMPTA77 |
SMD Small Signal Transistor PNP Darlington
SURFACE MOUNT PNP SILICON DARLINGTON TRANSISTOR
|
CENTRAL[Central Semiconductor Corp]
|
| CFB810 |
60.000W Medium Power PNP Plastic Leaded Transistor. 110V Vceo, 8.000A Ic, 1000 hFE.
PNP SILICON PLASTIC POWER DARLINGTON TRANSISTOR
TRANSISTOR | BJT | DARLINGTON | PNP | 110V V(BR)CEO | 8A I(C) | TO-220FP
|
Continental Device India Limited
|
| SLA4340 |
PNP NPN Darlington Transistor (H-Hridge)(PNP NPN达林顿晶体管H桥）) 4 A, 60 V, 4 CHANNEL, NPN AND PNP, Si, POWER TRANSISTOR
PNP NPN Darlington H-bridge
|
Sanken Electric Co., Ltd.
SANKEN[Sanken electric]
|
| 2SB1418/2SB1418A 2SB1418AQ 2SB1418P |
2SB1418. 2SB1418A - PNP Transistor Darlington
TRANSISTOR | BJT | DARLINGTON | PNP | 80V V(BR)CEO | 2A I(C) | TO-221VAR 晶体管|晶体管|达林顿|进步党| 80V的五（巴西）总裁|甲一（c）|21VAR
TRANSISTOR | BJT | DARLINGTON | PNP | 60V V(BR)CEO | 2A I(C) | TO-221VAR 晶体管|晶体管|达林顿|进步党| 60V的五（巴西）总裁|甲一（c）|21VAR
|
Atmel, Corp.
Amphenol, Corp.
|
| CJD127 CJD127PNP CJD122 CJD122NPN CJD122-NPN |
SMD Bipolar Power Transistor NPN Darlington
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR 互补性的芯片功率达林顿晶体管
From old datasheet system
SMD Bipolar Power Transistor PNP Darlington
|
Central Semiconductor, Corp.
Central Semiconductor Corp.
CENTRAL[Central Semiconductor Corp]
|
| KSH117TF KSH117ITU |
PNP Silicon Darlington Transistor; Package: TO-252(DPAK); No of Pins: 2; Container: Tape & Reel 2 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-252
2 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-251 IPAK-3
|
Fairchild Semiconductor, Corp.
|
| KSB1149 KSB1149OS KSB1149OSTU KSB1149YS KSB1149YST |
PNP Silicon Darlington Transistor
PNP Epitaxial Silicon Transistor
Low Collector Saturation Voltage Built-in Damper Diode at E-C
|
FAIRCHILD[Fairchild Semiconductor]
|
| MPSW63-D MPSW63RLRA |
One Watt Darlington Transistors PNP Silicon
Small Signal Darlington PNP
|
ON Semiconductor
|
| KSH127TM |
PNP Silicon Darlington Transistor; Package: TO-252(DPAK); No of Pins: 2; Container: Tape & Reel 8 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-252
|
Fairchild Semiconductor, Corp.
|
| CSB810 |
2.000W Medium Power PNP Plastic Leaded Transistor. 110V Vceo, 8.000A Ic, 1000 - 20000 hFE.
TRANSISTOR | BJT | DARLINGTON | PNP | 110V V(BR)CEO | 8A I(C) | TO-220AB 晶体管|晶体管|达林顿|进步党| 110伏特五（巴西）总裁| 8A条一（c）| TO - 220AB现有
|
Continental Device India Limited
Won-Top Electronics Co., Ltd.
|
