| PART |
Description |
Maker |
| MPSA62 MPSA64 MPSA63 ON2343 |
Darlington Transistor 500 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-226AA
From old datasheet system
For Specifications, See MPSA05, MPSA06 Data
Darlington Transistors(PNP Silicon)
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
ONSEMI[ON Semiconductor]
|
| 2N6298 JANTX2N6298 JANTX2N6299 JAN2N6298 JAN2N6299 |
PNP Darlington Transistor
PNP DARLINGTON POWER SILICON TRANSISTOR
|
MICROSEMI[Microsemi Corporation]
|
| 2SA1714 2SA1714K 2SA1714L 2SA1714M |
PNP high-speed switching darlington transistor
PNP SILICON EPITAXIAL POWER TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING 进步党硅外延功率晶体管（达林顿连接笔记本高）高速开
|
NEC Corp.
NEC, Corp.
|
| 2N6301 JANTX2N6300 JANTX2N6301 JANTXV2N6301 2N6300 |
NPN Darlington Transistor
PNP DARLINGTON POWER SILICON TRANSISTOR
|
MICROSEMI[Microsemi Corporation]
|
| FJPF9020 FJPF9020TU |
Monolithic Construction With Built In Base-Emitter Shunt Resistors
PNP Epitaxial Darlington Transistor
NPN Epitaxial Darlington Transistor
|
FAIRCHILD[Fairchild Semiconductor]
|
| CZTA14 CZTA64 |
SMD Small Signal Transistor NPN Darlington
SMD Small Signal Transistor PNP Darlington
SURFACE MOUNT COMPLEMENTARY SILICON DARLINGTON TRANSISTORS
|
CENTRAL[Central Semiconductor Corp]
|
| 2SB1316F5B 2SB1474F5B 2SD2143F5B 2SD2143F5A 2SD214 |
TRANSISTOR | BJT | DARLINGTON | PNP | 100V V(BR)CEO | 2A I(C) | TO-252
TRANSISTOR | BJT | DARLINGTON | PNP | 80V V(BR)CEO | 4A I(C) | TO-252
TRANSISTOR | BJT | DARLINGTON | NPN | 70V V(BR)CEO | 2A I(C) | TO-252 晶体管|晶体管|达林顿|叩| 70V的五（巴西）总裁|甲一（c）|52
TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 2A I(C) | TO-252
|
Panasonic Industrial Solutions
|
| 2SB1225 |
PNP Epitaxial Planar Silicon Darlington Transistor Driver Applications
PNP/NPN Epitaxial Planar Silicon Darlington Transistor
|
Sanyo
|
| MPSA63RLRM |
Darlington Transistors PNP Silicon 500 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-226AA
|
ON Semiconductor
|
| CSB810 |
2.000W Medium Power PNP Plastic Leaded Transistor. 110V Vceo, 8.000A Ic, 1000 - 20000 hFE.
TRANSISTOR | BJT | DARLINGTON | PNP | 110V V(BR)CEO | 8A I(C) | TO-220AB 晶体管|晶体管|达林顿|进步党| 110伏特五（巴西）总裁| 8A条一（c）| TO - 220AB现有
|
Continental Device India Limited
Won-Top Electronics Co., Ltd.
|
| MPSA63 MPSA64 MPSA62 |
EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE DARLINGTON TRANSISTOR)
|
KEC[KEC(Korea Electronics)]
|
| KTB1234TNBSP KTB1234T |
Darlington Transistor
EPITAXIAL PLANAR PNP TRANSISTOR
From old datasheet system
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
