| PART |
Description |
Maker |
| PC50F6 |
FRD MODULE 50A/600V/trr:100nsec
|
NIEC[Nihon Inter Electronics Corporation]
|
| PD50F4 |
FRD MODULE - 50A/400V/trr:80nsec
|
NIEC[Nihon Inter Electronics Corporation]
|
| PC50F5 |
FRD MODULE 50A/500V/trr:90nsec
|
NIEC[Nihon Inter Electronics Corporation]
|
| PD100F6 |
FRD MODULE - 100A/600V/trr:110nsec
|
NIEC[Nihon Inter Electronics Corporation]
|
| PD100F12 |
FRD MODULE - 100A/1200V/trr:250nsec
|
Nihon Inter Electronics Corporation
|
| PRHMB50A6 |
IGBT MODULE Chopper 50A 600V
|
NIEC[Nihon Inter Electronics Corporation]
|
| 6MBP50VDA060-50 |
IGBT MODULE (V series) 600V / 50A / IPM
|
Fuji Electric
|
| 6MBI50VA-060-50 |
IGBT MODULE (V series) 600V / 50A / 6 in one package
|
Fuji Electric
|
| RHRU5060 RHRU5050 FN3919 RHRU5040 |
50A, 400V - 600V Hyperfast Diodes
50A 400V - 600V Hyperfast Diodes
From old datasheet system
|
HARRIS SEMICONDUCTOR
INTERSIL[Intersil Corporation]
|
| FSF2510 FSF2210 FSN1410 FSN1606 IRF540 |
N Channel MOSFET; Package: TO-254; trr (nsec): 600; t(on) (nsec): 100; ID (A): 25; RDS(on) (Ohms): 0.07; PD (W): 125; BVDSS (V): 100; Rq: 1; VSD (V): 2.3 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-254; trr (nsec): 300; t(on) (nsec): 23; ID (A): 22; RDS(on) (Ohms): 0.1; PD (W): 100; BVDSS (V): 100; Rq: 1.3; VSD (V): 2.5 22 A, 100 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
N Channel MOSFET; Package: TO-257; trr (nsec): 250; t(on) (nsec): 14; ID (A): 14; RDS(on) (Ohms): 0.18; PD (W): 50; BVDSS (V): 100; Rq: 2; VSD (V): 2.5 14 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET
N Channel MOSFET; Package: TO-257; trr (nsec): 220; t(on) (nsec): 21; ID (A): 16; RDS(on) (Ohms): 0.07; PD (W): 50; BVDSS (V): 60; Rq: 2; VSD (V): 1.8 16 A, 60 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET
28 A, 100 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Microsemi, Corp.
STMicroelectronics N.V.
MICROSEMI CORP
|
| 10ERB60 |
Long Life Miniature Relay, PCB Type
FRD - 1A 600V 120ns
|
NIEC[Nihon Inter Electronics Corporation]
|
