| PART |
Description |
Maker |
| PD50F6 |
FRD MODULE 50A/600V/ TRR : 100 NSEC
|
ETC
NIEC[Nihon Inter Electronics Corporation]
|
| IXGE75N100Z IXGE50N90Z IXTE9N65X4U IXGE50N50Z |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1KV V(BR)CES | 75A I(C)
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 900V V(BR)CES | 50A I(C)
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 650V V(BR)DSS | 9A I(D) 晶体管| MOSFET功率模块|独立|650V五（巴西）直| 9A条（丁）
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 500V V(BR)CES | 50A I(C) 晶体管| IGBT功率模块|独立| 500V五（巴西）国际消费电子展| 50A条一（c
|
IXYS, Corp.
|
| P2H60F2 |
FRD MODULE 60A/200V
|
Nihon Inter Electronics...
NIEC[Nihon Inter Electronics Corporation]
|
| P2H30F4 |
FRD MODULE 30A/400V
|
NIEC[Nihon Inter Electronics Corporation]
|
| P2H30F6 |
FRD MODULE 30A/600V
|
NIEC[Nihon Inter Electronics Corporation]
|
| PH270F2 |
FRD MODULE 270A/200V/trr:150nsec
|
NIEC[Nihon Inter Electronics Corporation]
ETC[ETC]
|
| PC30F8 |
FRD MODULE 30A/800V/trr:60nsec
|
NIEC[Nihon Inter Electronics Corporation]
|
| RURG50120 FN3740 |
50A, 1200V Ultrafast Diode(50A, 1200V 瓒?揩??????)
50A, 1200V Ultrafast Diode(50A, 1200V 超快速二极管) 50 A, 1200 V, SILICON, RECTIFIER DIODE
50A 1200V Ultrafast Diode
From old datasheet system
|
HARRIS SEMICONDUCTOR
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| APT50M85JVFR |
POWER MOS V 500V 50A 0.085 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Advanced Power Technology
|
| 7MBI50N-120 |
IGBT MODULE(1200V/50A)
IGBT MODULE(1200V,50A)
|
Fuji Electric
|
| PCHMB50A6 |
IGBT MODULE Chopper 50A 600V
|
NIEC[Nihon Inter Electronics Corporation]
|
