| PART |
Description |
Maker |
| 2N7002BKW |
60 V, 310 mA N-channel Trench MOSFET 310 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
NXP Semiconductors N.V.
|
| C380SX500 C380AX500 C380BX500 C380CX500 C380DX500 |
Phase Control SCR 310 Amperes Avg 800 Volts Phase Control SCR 310 Amperes Avg 1600 Volts
|
Powerex Power Semicondu... POWEREX[Powerex Power Semiconductors]
|
| VIM-310 |
VIM-310
|
Varitronix international limited
|
| RO2053 |
310.0 MHz SAW Resonator
|
RFM[RF Monolithics, Inc]
|
| SR310 |
310.00 MHz One-Port SAW Resonator
|
http://
|
| LR38574 |
Timing Generator IC for 1 090 k/1 310 k-pixel CCDs
|
Sharp Corporation Sharp Electrionic Components
|
| NX8346TB NX8346TY |
1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
|
NEC
|
| NX5322EH-AZ NX5322EK-AZ |
1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE
|
California Eastern Labs
|
| LZ23J3V LR36685 |
1/2.7-type Interline Color CCD Area Sensor with 1 310 k Pixels
|
SHARP[Sharp Electrionic Components]
|
| NX6308GH NX6308GH-15 |
1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION
|
Renesas Electronics Corporation
|
| R463I333050N0K |
Capacitor, film, 0.33 uF, /-10% Tol, -40/ 110C, Safety: X2, 310 VAC, Lead Spacing=15 mm
|
Kemet Corporation
|