| PART |
Description |
Maker |
| NTE5585 NTE5580 NTE5582 NTE5584 |
Silicon controlled rectiifier for phase control applications. Repetitive peak off-state and reverse voltage Vdrm,Vrrm = 1200V. Max RMS on-state current It(rms) = 235A.
Silicon Controlled Rectifier for Phase Control Applications
Silicon controlled rectiifier for phase control applications. Repetitive peak off-state and reverse voltage Vdrm,Vrrm = 600V. Max RMS on-state current It(rms) = 235A.
|
NTE[NTE Electronics]
|
| MCR718 MCR718T4 MCR716T4 MCR716 |
Silicon Controlled Rectifier (Reverse Blocking Thyristors)
Sensitive Gate Silicon Controlled Rectifiers(SCRs 4.0 AMPERES RMS 400 − 600 VOLTS)
Sensitive Gate Silicon Controlled Rectifiers(SCRs 4.0 AMPERES RMS 400 - 600 VOLTS)
|
ONSEMI[ON Semiconductor]
|
| C106 C106S C106A C106B C106C C106D C106E C106F C10 |
4A sensitive-gate silicon controlled rectifier. Vrrm 700V.
4-A Sensitive-Gate Silicon Controlled Rectifiers
|
General Electric Solid State
GESS[GE Solid State]
http://
|
| 2N3896 2N3899 2N6171 2N6172 2N6173 2N6174 2N3870 2 |
Silicon Controlled Rectifiers(Reverse Blocking Triode Thyristors) 可控硅整流器（反向阻断三极晶闸管
Silicon Controlled Rectifiers(Reverse Blocking Triode Thyristors) 35 A, 400 V, SCR, TO-203AA
Silicon Controlled Rectifiers(Reverse Blocking Triode Thyristors) 35 A, 100 V, SCR, TO-203AA
(2N38xx) Silicon Controlled Rectifiers(Reverse Blocking Triode Thyristors)
|
Motorola Mobility Holdings, Inc.
Motorola Inc
MOTOROLA[Motorola, Inc]
|
| X0405BE X0403ME |
SILICON CONTROLLED RECTIFIER,200V V(DRM),4A I(T),TO-202
SILICON CONTROLLED RECTIFIER,600V V(DRM),2.4A I(T),TO-202
From old datasheet system
|
ST Microelectronics
|
| MCR12DSMT4 MCR12DSNT4G MCR12DSM MCR12DSMT4G MCR12D |
Sensitive Gate Silicon Controlled Rectifiers(???纭??娴??)
Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors
|
ONSEMI[ON Semiconductor]
|
| CS218-35D CS218-35PB CS218-35B CS218-35N CS218-35M |
SILICON CONTROLLED RECTIFIER 35 AMP, 200 THRU 1200 VOLTS 35 A, 400 V, SCR, TO-218
SILICON CONTROLLED RECTIFIER 35 AMP, 200 THRU 1200 VOLTS 35 A, 200 V, SCR, TO-218
SILICON CONTROLLED RECTIFIER 35 AMP, 200 THRU 1200 VOLTS 35 A, 600 V, SCR, TO-218
SILICON CONTROLLED RECTIFIER 35 AMP, 200 THRU 1200 VOLTS 35 A, 800 V, SCR, TO-218
SILICON CONTROLLED RECTIFIER 35 AMP, 200 THRU 1200 VOLTS 35 A, 1000 V, SCR, TO-218
SILICON CONTROLLED RECTIFIER 35 AMP, 200 THRU 1200 VOLTS 35 A, 1200 V, SCR, TO-218
|
Central Semiconductor Corp.
Central Semiconductor, Corp.
|
| 55C07 55C80BF 55C120B 55C100B 55C100BF |
Silicon Controlled Rectifier
86 A, SCR, TO-208AD
Silicon Controlled Rectifier
|
Microsemi Corporation
MICROSEMI CORP-LAWRENCE
|
| 2N689A 2N684A 2N686A 2N684 2N691 2N683 2N688 2N692 |
SILICON CONTROLLED RECTIFIER 25 AMPS, 25 THRU 800 VOLTS 25 A, 150 V, SCR, TO-48
SILICON CONTROLLED RECTIFIER 25 AMPS 25 THRU 800 VOLTS
Leaded Thyristor SCR
|
Central Semiconductor, Corp.
Central Semiconductor Corp.
CENTRAL[Central Semiconductor Corp]
Central Semiconductor C...
|
| 2N3005 BRX49 2N5063 2N3002 2N888 2N5061 2N880 2N88 |
SCRs (Silicon Controlled Rectifiers)
SCRs (Silicon Controlled Rectifiers) 晶闸管（可控硅整流器
|
Boca Semiconductor Corp...
BOCA[Boca Semiconductor Corporation]
Boca Semiconductor, Corp.
|
| BYV28-50 BYV28-600 BYV28 BYV28-500 BYV28-100 BYV28 |
From old datasheet system
Ultra fast low-loss controlled avalanche rectifiers 1.9 A, 50 V, SILICON, RECTIFIER DIODE
Ultra fast low-loss controlled avalanche rectifier(超快速低损耗控制的雪崩整流 1.9 A, 200 V, SILICON, RECTIFIER DIODE
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
