| PART |
Description |
Maker |
| AF239 Q60106-X239 |
PNP GERMANIUM RF TRANSISTOR 进步党锗射频晶体
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| NTE105 |
Germanium PNP Transistor Audio Power Amp
|
NTE[NTE Electronics]
|
| 2SA679 2SA680 |
SILICON PNP EPITAXIAL MESA TRANSISTOR (TENTATIVE)
|
Unknow
|
| 2SA483 |
SILICON PNP TRIPLE DIFFUSED MESA TRANSISTOR
|
Unknow
|
| 2SB557 |
ICON PNP TRIPLE DIFFUSED MESA TRANSISTOR
|
Unknow
ETC
|
| NTE121 |
Germanium PNP Transistor Audio Frequency Power Amplifier
|
NTE[NTE Electronics]
|
| 2N398 |
PNP germanium transistor for high-voltage, audio-frequency applications
|
New Jersey Semi-Conductor Products, Inc.
|
| 2SB556 |
(2SB555 / 2SB556) SILICON PNP TRIPLE DIFFUSED MESA TRANSISTOR
|
ETC
|
| 2N539 2N540 2N538 2N540A 2N539A |
PNP GERMANIUM ALLOY JUNCTION POWER TRANSISTOR
PNP GERMANIUM ALLOY JUNCTION POWER TRANSISTOR
|
New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conductor P...
New Jersey Semi-Conduct...
|
| 1N476 1N499 1N500 1N279 1N292 1N294 1N567 1N450 1N |
165 V, 500 mA, gold bonded germanium diode
100 V, 500 mA, gold bonded germanium diode
12 V, 500 mA, gold bonded germanium diode
90 V, 500 mA, gold bonded germanium diode
GOLD BONDED DIODES(LOW FORWARD VOLTAGE, LOW POWER CONSUMPTION)
75 V, 500 mA, gold bonded germanium diode
120 V, 500 mA, gold bonded germanium diode
70 V, 500 mA, gold bonded germanium diode
80 V, 500 mA, gold bonded germanium diode
115 V, 500 mA, gold bonded germanium diode
60 V, 500 mA, gold bonded germanium diode
|
BKC International Electronics
ETC[ETC]
|
| 2SC5716 |
Transistor Silicon NPN Triple Diffused Mesa Type Horizontal Deflection Output for High Resolution Display, Color TV
TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type
|
TOSHIBA[Toshiba Semiconductor]
|
