| PART |
Description |
Maker |
| NE76000 NE76000L |
LOW NOISE L TO Ku BAND GaAs MESFET
|
NEC Corp.
NEC[NEC]
|
| NE70000 NE70083 NE70083-4 |
80 GHz, low noise Ku-K band GaAs MESFET
|
NEC
|
| CFY25-20E7916 |
HiRel X-Band GaAs Low Noise/General P...
|
Infineon
|
| NE3509M14 |
N-Channel GaAs HJ-FET, L to C Band Low Noise Amplifier
|
Renesas Electronics Corporation
|
| NJG1131HA8 |
UHF BAND LOW NOISE AMPLIFIER GaAs MMIC
|
New Japan Radio
|
| NE52118 NE52118-T1 |
L to S BAND LOW NOISE AMPLIFIER NPN GaAs HBT
|
NEC Corp.
NEC[NEC]
|
| NE71300-N NE71300-M NE71300-L NE713 NE71383B |
L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET
|
NEC[NEC]
|
| NE3520S03-T1D-A |
N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain
|
California Eastern Labs
|
| AGB3301 AGB3301S24Q1 |
50 ohm HGIH LINEARITY LOW NOISE WIDEBAND GAIN BLOCK 250 MHz - 3000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
Gain Block Amplifiers
The AGB is one of a series of GaAs MESFET amplifiers designed for use in applications requiring high linearity, low noise and low ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
Anadigics Inc
|
| HMC719LP4 HMC719LP4E |
GaAs PHEMT MMIC HIGH IP3 LOW NOISE AMPLIFIER, 1.3 - 2.9 GHz
1300 MHz - 2900 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
Hittite Microwave Corporation
Hittite Microwave Corpo...
|
