| PART |
Description |
Maker |
| CFY25-P CFY25 CFY25-20 CFY25-20P CFY25-23 CFY25-23 |
X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET
HiRel X-Band GaAs Low Noise / General Purpose MESFET 伊雷尔X波段功率低噪通用场效应晶体管
|
TRIQUINT SEMICONDUCTOR INC
INFINEON[Infineon Technologies AG]
|
| CFB0303 |
L BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
High Dynamic Range Low Noise GaAs FET
|
MIMIX BROADBAND INC
MIMIX[Mimix Broadband]
|
| NE76118_00 NE76118 NE76118-T1 NE76118-T2 NE7611800 |
GaAs MESFET L TO S BAND LOW NOISE AMPLIFIER
|
California Eastern Labs
Duracell
NEC[NEC]
|
| NE13700 NE13783S NE13783-4 |
80 GHz, 3 V, low noise Ku-band GaAs MESFET
|
NEC
|
| NE13783 NE13700 |
(NE13700 / NE13783) LOW NOISE KU-BAND GAAS MESFET
|
NEC
|
| NJG1146KG1 |
WIDE BAND LOW NOISE AMPLIFIER GaAs MMIC
|
New Japan Radio
|
| NE76038 NE76038-T1 |
LOW NOISE L TO Ku-BAND GaAs MESFET 低噪L降至KU波段GaAs MESFET器件
|
NEC, Corp.
NEC Corp.
Duracell
|
| NJG1129MD7 |
UHF BAND LOW NOISE AMPLIFIER GaAs MMIC
|
New Japan Radio
|
| NE3521M04-T2B-A NE3521M04-T2-A |
N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain
|
Renesas Electronics Corporation
|
| NE3520S03-T1D-A |
N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain
|
California Eastern Labs
|
| NE52418 NE52418-T1-A NE52418-A |
NECs L TO S BAND LOW NOISE AMPLIFIER NPN GaAs HBT
|
California Eastern Laboratories
Duracell
California Eastern Labs
|
| AGB3301 AGB3301S24Q1 |
50 ohm HGIH LINEARITY LOW NOISE WIDEBAND GAIN BLOCK 250 MHz - 3000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
Gain Block Amplifiers
The AGB is one of a series of GaAs MESFET amplifiers designed for use in applications requiring high linearity, low noise and low ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
Anadigics Inc
|
