| PART |
Description |
Maker |
| MX29F016TI-90 29F016-12 29F016-90 MX29F016 MX29F01 |
16M-BIT [2M X 8] CMOS EQUAL SECTOR FLASH MEMORY
|
MCNIX[Macronix International]
|
| MX29F016TC-90 |
16M-BIT [2M X 8] CMOS EQUAL SECTOR FLASH MEMORY
|
Macronix International
|
| MX29F016T4I-90 MX29F016TI-90 MX29F016MI-90 |
16M-BIT [2M X 8] CMOS EQUAL SECTOR FLASH MEMORY
FPGA - 200000 SYSTEM GATE 2.5 VOLT - NOT RECOMMENDED for NEW DESIGN 2M X 8 FLASH 5V PROM, 90 ns, PDSO44
|
Macronix International Co., Ltd.
|
| MX29LV065BTI-12 MX29LV065BTI-12G MX29LV065B MX29LV |
64M-BIT [8M x 8] CMOS EQUAL SECTOR FLASH MEMORY
8M-BIT [1M x 8] CMOS SINGLE VOLTAGE 3V ONLY EQUAL SECTOR FLASH MEMORY
|
List of Unclassifed Manufacturers
http://
|
| 29F040-90 29F040-55 29F040-70 MX29F040PI-70 MX29F0 |
4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY 512K X 8 FLASH 5V PROM, 55 ns, PDIP32
4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY 512K X 8 FLASH 5V PROM, 70 ns, PDIP32
4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY 4分位[512KX8]的CMOS平等部门闪存
4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY 512K X 8 FLASH 5V PROM, 70 ns, PDSO32
|
Macronix International Co., Ltd.
|
| PD42S17405L |
16M- bit CMOS dynamic RAMs(16M CMOS 动态RAM) 1,600位CMOS动态存储器,600的CMOS动态内存）
|
NEC, Corp.
|
| MX29F040 MX29F040TC-70 MX29F040TC-70G MX29F040TI-9 |
4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY
|
MCNIX[Macronix International]
|
| TC58FVB160-12 TC58FVB160-85 |
16M Bit (1M×16Bits ) CMOS NAND EEPROM(16M CMOS与非EEPROM) 1,600位（100万16位）的CMOS闪存EEPROM的（1,600 EEPROM中的CMOS与非
|
Toshiba Corporation
Toshiba, Corp.
|
| MX29LV040CTC-12 MX29LV040CTC-12G |
4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY EQUAL SECTOR FLASH MEMORY 512K X 8 FLASH 3V PROM, 120 ns, PDSO32
|
Macronix International Co., Ltd.
|
