| PART |
Description |
Maker |
| MX27C2100PC-90 27C2048 27C2100-12 27C2100-15 27C21 |
2M-BIT [256Kx8/128x16] CMOS EPROM
|
MCNIX[Macronix International]
|
| 27C2100-70 |
2M-BIT [256Kx8/128x16] CMOS EPROM
|
Macronix International Co., Ltd.
|
| W27C02-70 W27C02 W27C02Q-70 W27C02P-70 |
EPROM 存储
EEPROM|256KX8|CMOS|TSSOP|32PIN|PLASTIC
EEPROM|256KX8|CMOS|LDCC|32PIN|PLASTIC
256K X 8 ELECTRICALLY ERASABLE EPROM
NVM > EPROM
EEPROM|256KX8|CMOS|DIP|32PIN|PLASTIC
|
Winbond Electronics, Corp.
|
| MX27L2000MI-15 MX27L2000MC-25 MX27L2000MC-12 MX27L |
null2M-BIT [256Kx8] CMOS EPROM
|
MCNIX[Macronix International]
|
| AM29F200B AM29F200BT-120SC |
2 Mbit (256 K x 8-Bit/128 K x 16-Bit)
EEPROM,FLASH,128KX16/256KX8,CMOS,SOP,44PIN,PLASTIC
From old datasheet system
|
AMD Inc
|
| N02L83W2A |
2Mb Ultra-Low Power Asynchronous CMOS SRAM 256Kx8 bit
|
ON Semiconductor
|
| N02M083WL1AN-70I N02M083WL1A N02M083WL1AD N02M083W |
2Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 256Kx8 bit
|
NANOAMP[NanoAmp Solutions, Inc.]
|
| N02M0818L1 N02M0818L1AN-85I N02M0818L1A N02M0818L1 |
2Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 256Kx8 bit
|
NANOAMP[NanoAmp Solutions, Inc.]
|
| BS62LV2016SI BS62LV2009 BS62LV2009DC BS62LV2009DC- |
Asynchronous 2M(256Kx8) bits Static RAM
Very Low Power/Voltage CMOS SRAM 256K X 8 bit 非常低功电压CMOS SRAM56K × 8
|
BSI[Brilliance Semiconductor]
BRILLIANCE SEMICONDUCTOR, INC.
|
| K6F2008V2E K6F2008V2E-YF70 K6F2008V2E-LF55 K6F2008 |
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM 256Kx8位超低功耗和低电压的CMOS静态RAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| MX29F200CB |
2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY
|
Macronix International
|
| LE25U20AMB-AH |
2M-bit (256Kx8)Serial Flash Memory
|
ON Semiconductor
|
