| PART |
Description |
Maker |
| UPD4416001G5-A17-9JF UPD4416001G5-A15-9JF UPD44160 |
16M X 1 STANDARD SRAM, 15 ns, PDSO54 16M-BIT CMOS FAST SRAM 16M-WORD BY 1-BIT 1,600位CMOS快速静态存储器1,600 - Word1
|
NEC, Corp. NEC Corp. NEC[NEC]
|
| MX23L1651MC-50G MX23L1651 MX23L1651HC-15 |
16M-BIT [16M x 1] CMOS SERIAL MASK-ROM
|
MCNIX[Macronix International]
|
| KM23C16205DSG |
16M-Bit (1Mx16 /512Kx32) CMOS MASK ROM(16M(1Mx16 /512Kx32) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| TC58V64DC |
16M-Bit CMOS NAND EPROM
|
Toshiba Semiconductor
|
| MX25L1635D MX25L1635DM1I-12G MX25L1635DM2I-10G MX2 |
16M-BIT [x 1/x 2/x 4] CMOS SERIAL FLASH
|
Macronix International
|
| MBM29F160TE70TR MBM29F160BE70TR MBM29F160TE70 |
FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT
|
SPANSION[SPANSION]
|
| MBM29LV160T-90PFTN MBM29LV160T-90PFTR MBM29LV160B- |
FLASH MEMORY CMOS 16M (2M x 8/1M x 16) BIT
|
SPANSION[SPANSION]
|
| MBM29DL161BD |
(MBM29DL16xTD/BD) FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT
|
Fujitsu Media Devices
|
| MX25L1606EM1I-12G MX25L1606EM2I-12G MX25L1606EMI-1 |
3V, 16M-BIT [x 1/x 2] CMOS SERIAL FLASH MEMORY
|
Macronix International
|
| TC58V16BFT |
16M-Bit CMOS NAND Flash EPROM
|
Toshiba Semiconductor
|
| MBM29DL161BE-90PBT MBM29DL161BE-70TR MBM29DL161BE- |
FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation 1M X 16 FLASH 3V PROM, 70 ns, PBGA48 FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation 1M X 16 FLASH 3V PROM, 70 ns, PDSO48
|
Spansion Inc. Spansion, Inc. SPANSION LLC
|
| MX29L1611G MX29L1611GPC-10 MX29L1611GPC-12 MX29L16 |
16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE FLASH EEPROM
|
MCNIX[Macronix International]
|