| PART |
Description |
Maker |
| GE28F320W30B70 GE28F320W30B85 RD28F6408W30T85 28F6 |
Segmented Alphanumeric LED; Display Technology:LED; No. of Digits/Alpha:1; Body Material:GaAsP; LED Color:Red; Leaded Process Compatible:Yes; Luminous Intensity:7.5mcd RoHS Compliant: Yes 2M X 16 FLASH 1.8V PROM, PBGA56
1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) 2M X 16 FLASH 1.8V PROM, PBGA56
1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) SPECIALTY MEMORY CIRCUIT, PBGA80
1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) 1.8伏英特尔无线闪存伏的I / O和SRAM（宽30
|
Intel, Corp.
Intel Corp.
|
| DS42587 AM29DL323D |
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
MCP Flash Memory and SRAM
|
AMD[Advanced Micro Devices]
|
| DS42553 AM29DL323D |
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
MCP Flash Memory and SRAM
|
AMD[Advanced Micro Devices]
|
| MB84VA2003-10 MB84VA20 MB84VA2002 MB84VA2002-10 MB |
MCP (Multi-Chip Package) FLASH MEMORY & SRAM 8M (x 8/x 16) FLASH MEMORY & 2M (x 8) STATIC RAM
|
Fujitsu Microelectronics
FUJITSU[Fujitsu Media Devices Limited]
|
| AM41DL16X4D AM41DL1614DT70IS SPANSIONLLC-AM41DL162 |
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM SPECIALTY MEMORY CIRCUIT, PBGA69
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
|
http://
ADVANCED MICRO DEVICES INC
SPANSION LLC
Advanced Micro Devices, Inc.
|
| A82DL16X4T A82DL1624 A82DL1624TG-70 A82DL1624TG-70 |
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL16x4T(U) 16 Megabit (2Mx8 Bit/1Simultaneous Operation Flash Memory and 4M (256Kx16 Bit) S
|
AMICC[AMIC Technology]
|
| AS8F512K32Q-90/CT AS8F512K32Q-90/IT AS8F512K32Q-90 |
128K x 32 SRAM SRAM MEMORY ARRAY 128K X 32 MULTI DEVICE SRAM MODULE, 15 ns, CPGA66
128K x 32 SRAM SRAM MEMORY ARRAY 128K X 32 MULTI DEVICE SRAM MODULE, 15 ns, CQFP68
128K x 32 SRAM SRAM MEMORY ARRAY 128K X 32 MULTI DEVICE SRAM MODULE, 35 ns, CQFP68
512K x 32 FLASH FLASH MEMORY ARRAY 512K X 32 FLASH 5V PROM MODULE, 90 ns, CQFP68
512K x 32 FLASH FLASH MEMORY ARRAY 512K X 32 FLASH 5V PROM MODULE, 120 ns, CQFP68
128K x 32 SRAM SRAM MEMORY ARRAY 128K X 32 MULTI DEVICE SRAM MODULE, 17 ns, CQFP68
128K x 32 SRAM SRAM MEMORY ARRAY 128K X 32 MULTI DEVICE SRAM MODULE, 20 ns, CQFP68
|
Austin Semiconductor, Inc
|
| SST34HF1621S SST34HF1621C SST34HF1641C |
(SST34HF16xxx) 16M-bit Concurrent SuperFlash + SRAM Combo Memory
|
Silicon Storage Technology
|
| M76DW52003TA90ZT M76DW52003BA M76DW52003BA70ZT M76 |
SPECIALTY MEMORY CIRCUIT, PBGA73
32Mbit (4Mb x8/ 2Mb x16, Dual Bank, Boot Block) Flash Memory and 4Mbit (256Kb x16) SRAM, Multiple Memory Product
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| AM45DL32X8G AM45DL3238GB85IT |
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
SPECIALTY MEMORY CIRCUIT, PBGA73
|
ADVANCED MICRO DEVICES INC
|
| M6MGB_T166S2BWG M6MGB M6MGT166S2BWG E99007_A |
16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY &
CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-CSP
From old datasheet system
|
Mitsubishi
|
| E28F256J3C-110 GE28F256J3C-110 E28F256J3C-115 GE28 |
Intel StrataFlash Memory (J3) 英特StrataFlash存储器（J3
Aluminum Electrolytic Radial Lead Audio Grade Capacitor; Capacitance: 2200uF; Voltage: 10V; Case Size: 10x20 mm; Packaging: Bulk 英特尔StrataFlash存储器（J3
Intel StrataFlash Memory (J3) 16M X 16 FLASH 2.7V PROM, 125 ns, PDSO56
Intel StrataFlash Memory (J3) 英特尔StrataFlash存储器（J3
Intel StrataFlash Memory (J3) 8M X 16 FLASH 3V PROM, 150 ns, PDSO56
Intel StrataFlash Memory (J3) 8M X 16 FLASH 2.7V PROM, 120 ns, PBGA64
(TE28FxxxJ3C) Strata Flash Memory
Strata Flash Memory / 256 Mbit
|
Intel, Corp.
Intel Corp.
http://
Intel Corporation
|
