| PART |
Description |
Maker |
| MSK4422U MSK4422D MSK4422G MSK4422S |
20 AMP, 200 VOLT MOSFET SMART POWER 3-PHASE MOTOR DRIVE HYBRID
|
MSK[M.S. Kennedy Corporation]
|
| MSK4322U MSK4322 MSK4322D MSK4322HD MSK4322HS MSK4 |
20 AMP, 200 VOLT MOSFET SMART POWER 3-PHASE MOTOR DRIVE POWER HYBRID
|
MSK[M.S. Kennedy Corporation]
|
| BTS4880R BTS4880-R |
Smart High Side Switches - 8 x 200 mΩ, 12-45V
Smart Power High-Side-Switch Eight Channels: 8 x 200 m
|
Infineon Technologies AG
|
| SB073P200-W-AG SB073P200-W-AG_AL SB073P200-W-AG/AL |
Schottky Barrier Diode Wafer 73 Mils, 200 Volt, 5 Amp
|
TRANSYS Electronics Lim...
TRANSYS Electronics Limited
|
| CMSH3-100MFL |
SURFACE MOUNT SILICON SCHOTTKY RECTIFIERS 3.0 AMP, 100 THRU 200 VOLT
|
Central Semiconductor Corp
|
| MBR10200CT |
10 Amp High Voltage Power Schottky Barrier Rectifier 200 Volt
|
Micro Commercial Components
|
| Q7010LH5 Q7010RH5 Q7012LH5 Q7012RH5 Q7015L6 Q7015R |
Alternistor triac, 25A, 800 Volt
Alternistor triac, 15A, 400 Volt
Alternistor triac, 25A, 500 Volt
Alternistor triac, 25A, 200 Volt
Alternistor triac, 8A, 500 Volt
Alternistor triac, 25A, 400 Volt
Gender:Socket; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-35
Alternistor Triacs 交变双向
Alternistor triac, 6A, 500 Volt
Alternistor triac, 15A, 200 Volt
Alternistor triac, 15A, 500 Volt
Alternistor triac, 15A, 600 Volt
Alternistor Triacs
|
TECCOR[Teccor Electronics]
Littelfuse, Inc.
Motorola Mobility Holdings, Inc.
|
| SPM6M050-010D |
Three-Phase MOSFET BRIDGE 100 VOLT 50 AMP
|
SENSITRON[Sensitron]
|
| MSK4225U MSK4225D MSK4225G MSK4225S |
75 VOLT 20 AMP MOSFET H-BRIDGE PWM MOTOR DRIVER/AMPLIFIER
|
MSK[M.S. Kennedy Corporation]
|
| SFF20P10J |
20 AMP /100 Volts 200 mΩ P-Channel MOSFET
20 AMP /100 Volts 200 mヘ P-Channel MOSFET
|
SSDI[Solid States Devices, Inc]
|
| S29GL064M90FBIR00 S29GL064M90FCIR02 S29GL064M90FCI |
MOSFET, Switching; VDSS (V): 300; ID (A): 88; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.042; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5000; toff (µs) typ: -; Package: TO-3P
MOSFET, Switching; VDSS (V): 30; ID (A): 60; Pch : 90; RDS (ON) typ. (ohm) @10V: 0.0046; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2500; toff (µs) typ: 0.07; Package: TO-220AB
MOSFET, Switching; VDSS (V): 60; ID (A): 70; Pch : 80; RDS (ON) typ. (ohm) @10V: 0.006; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 6200; toff (µs) typ: 0.125; Package: LDPAK (S)- (2)
MOSFET, Switching; VDSS (V): 60; ID (A): 70; Pch : 80; RDS (ON) typ. (ohm) @10V: 0.006; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 6200; toff (µs) typ: 0.125; Package: LDPAK (L)
MOSFET, Switching; VDSS (V): 150; ID (A): 70; Pch : -; RDS (ON) typ. (ohm) @10V: 0.022; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5100; toff (µs) typ: -; Package: TO-3P
MOSFET, Switching; VDSS (V): 200; ID (A): 25; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.036; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2200; toff (µs) typ: 0.11; Package: TO-220FN
MOSFET, Switching; VDSS (V): 200; ID (A): 96; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.02; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 4900; toff (µs) typ: 0.22; Package: TO-3P
MOSFET, Switching; VDSS (V): 290; ID (A): 18; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.07; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2200; toff (µs) typ: 0.11; Package: TO-220FN
MOSFET, Switching; VDSS (V): 230; ID (A): 35; Pch : -; RDS (ON) typ. (ohm) @10V: 0.03; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5200; toff (µs) typ: -; Package: TO-3PFM
MOSFET, Switching; VDSS (V): 300; ID (A): 40; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.058; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5150; toff (µs) typ: 0.22; Package: TO-3P
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 3.0伏只页面模式闪存具有0.23微米工艺技术的MirrorBit
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 4M X 16 FLASH 3V PROM, 90 ns, PDSO48
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 4M X 16 FLASH 3V PROM, 90 ns, PBGA64
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 16M X 16 FLASH 3V PROM, 100 ns, PDSO56
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 8M X 16 FLASH 3V PROM, 90 ns, PDSO56
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 8M X 8 FLASH 3V PROM, 90 ns, PBGA63
MOSFET, Switching; VDSS (V): 30; ID (A): 30; Pch : 50; RDS (ON) typ. (ohm) @10V: 0.008; RDS (ON) typ. (ohm) @4V[4.5V]: 0.013 (5V); RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1400; toff (µs) typ: 0.055; Package: LDPAK (L)
|
Spansion Inc.
Spansion, Inc.
SPANSION LLC
|
