| PART |
Description |
Maker |
| TF1103 |
10 MHz - 150 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
|
TEMEX COMPONENTS
|
| PTB20017 |
150 Watts, 86000 MHz Cellular Radio RF Power Transistor
150 Watts, 860-900 MHz Cellular Radio RF Power Transistor
150 Watts 860-900 MHz Cellular Radio RF Power Transistor
|
Ericsson Microelectronics
ERICSSON[Ericsson]
|
| 2SC2411 |
NPN Transistor Plastic-Encapsulate Transi stors
|
SeCoS Halbleitertechnologie GmbH
|
| EH3725ETTS-150.000M |
OSCILLATORS 25PPM -40 85 2.5V 4 150.000MHZ TS CMOS 5.0X3.2 4PAD SMD CRYSTAL OSCILLATOR, CLOCK, 150 MHz, LVCMOS OUTPUT
|
Ecliptek, Corp.
|
| EH2725ETTS-150.000M |
OSCILLATORS 25PPM -40 85 2.5V 4 150.000MHZ TS CMOS 7.0X5.0 4PAD SMD CRYSTAL OSCILLATOR, CLOCK, 150 MHz, LVCMOS OUTPUT
|
Ecliptek, Corp.
|
| UPB556C |
150 Mhz Divide By 16/17 Low Power Prescaler
|
NEC
|
| UF28150J |
POWER MOSFET TRANSISTOR 150 WATTS, 100 - 500 MHz, 28 V
|
Tyco Electronics
|
| TPV8100BD |
TPV8100B 470-860 MHz, 150 W, 28 V RF Power Transistor - Archived
|
Motorola
|
| M31002ANPN M31012ANPN M31022ANPN M31006ANPN M31026 |
VCXO, CLOCK, 150 MHz - 1400 MHz, LVDS OUTPUT
VCXO, CLOCK, 150 MHz - 1400 MHz, CMOS OUTPUT
VCXO, CLOCK, 150 MHz - 1400 MHz, PECL OUTPUT
9x14 mm, 3.3/2.5/1.8 Volt, LVPECL/LVDS/CML, VCXO
5x7 mm, 3.3/2.5/1.8 Volt, LVPECL/LVDS/CML, VCXO
|
MTRONPTI
|
| PTFA041501HL PTFA041501GL09 |
Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420-500 MHz
|
Infineon Technologies AG
|
| PTFB211501E PTFB211501F |
Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 鈥?2170 MHz
|
Infineon Technologies AG
|
| PXAC241702FCV1R250 PXAC241702FCV1R250XTMA1 |
Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2300 ?2400 MHz
|
Infineon Technologies A...
|
