| PART |
Description |
Maker |
| RFK35N10 RFK35N08 |
POWER MOS FIELD - EFFECT TRANSISTORS, N - CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| IRFF110 IRFF111 IRFF112 IRFF113 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.0A.
Power MOS Field-Effect Transistors
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.5A.
|
General Electric Solid State
GE Solid State
|
| SSM3J01T |
Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
|
Toshiba Semiconductor
|
| PTF181301 PTF181301A |
LDMOS RF Power Field Effect Transistor 130 W, 1805-1880 MHz LDMOS射频功率场效应晶体管130瓦，1805年至1880年兆
LDMOS RF Power Field Effect Transistor 130 W/ 1805-1880 MHz
|
INFINEON[Infineon Technologies AG]
|
| T491D226K025AT T491D476K016AT EMVY630GTR331MMH0S 2 |
RF Power Field Effect Transistors
|
Freescale Semiconductor, Inc
Freescale Semiconductor...
|
| MTM15N20 |
Power Field Effect Transistor
|
New Jersey Semi-Conductor P...
|
| 9C12063A10R0FKHFT ATC100B3R0BT500XT ATC100B4R3BT50 |
RF Power Field Effect Transistor
|
Freescale Semiconductor, Inc
|
| MRF8S8260HR3 MRF8S8260HSR3 |
RF Power Field Effect Transistors
|
Freescale Semiconductor, Inc
|
| MRF5S21150S MRF5S21150SR3 MRF5S21150 MRF5S21150R3 |
RF POWER FIELD EFFECT TRANSISTORS
|
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
|
| MTP6N10 |
POWER FIELD EFFECT TRANSISTOR
|
MOTOROLA[Motorola, Inc]
|
| MRF5S9101MBR1 MRF5S9101NBR1 MRF5S9101NR1 |
RF Power Field Effect Transistors
|
Freescale (Motorola)
|
