| PART |
Description |
Maker |
| AT-31011 AT-31011-BLK AT-31011-TR1 AT-31033 AT-310 |
TERM BLOCK HDR 5.08MM 3POS PCB
Low Current/ High Performance NPN Silicon Bipolar Transistor
Low Current High Performance NPN Silicon Bipolar Transistor
Low Current, High Performance NPN Silicon Bipolar Transistor
|
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
|
| MP4T64533 |
Silicon Bipolar High fT Low Noise Microwave Transistors 硅双极高fT的微波低噪声晶体
|
M-Pulse Microwave, Inc.
|
| BFR949T |
RF-Bipolar - NPN Silicon RF transistor for low noise, high gain broadband amplifiers in SC-75
|
Infineon Technologies AG
|
| BFR949L3 |
RF-Bipolar - NPN Silicon RF transistor for low noise, high gain broadband amplifiers in TSLP-3
|
Infineon Technologies AG
|
| BFP183W |
RF-Bipolar - For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA
NPN Silicon RF Transistor
|
INFINEON[Infineon Technologies AG]
|
| BFP183R |
RF-Bipolar - For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA
NPN Silicon RF Transistor
|
Infineon Technologies AG
|
| BFP620FE7764 |
RF-Bipolar - NPN Silicon Germanium RF Transistor, high gain low noise RF transistor in flatlead package TSFP-4
|
Infineon
|
| MSA-2035 MSA-2011 |
Silicon Bipolar RFIC Amplifiers(硅双极型射频电路放大
(MSA-20xx) Cascadable Silicon Bipolar MMIC Amplifier
|
Agilent(Hewlett-Packard)
|
| MC33076DR2 MC330761 MC33076P1 MC33076-D |
Dual High Output Current, Low Power, Low Noise Bipolar Operational Amplifier
|
ON Semiconductor
|
| GT15M321 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
|
TOSHIBA[Toshiba Semiconductor]
|
| PHT41470B |
Up to 6 GHz Low Noise Silicon Bipolar Transistor
|
Teledyne Technologies I...
|
