| PART |
Description |
Maker |
| MASWSS0020 MASWSS0020SMB MASWSS0020TR |
DC-3 GHz, GaAs SP4T 2.5V high power switch
GaAs SP4T 2.5V High Power Switch DC - 3 GHz
ER 9C 6#16 3#12 SKT RECP
ER 9C 6#16 3#12 PIN RECP 砷化镓SP4T 2.5V的大功率开关直 3千兆
|
MA-Com
MACOM[Tyco Electronics]
|
| TC1504N |
1W High Linearity and High Efficiency GaAs Power FETs
|
Transcom, Inc.
|
| RFS1006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-00 |
3.4-3.6 GHz Power Amplifier 3400 MHz - 3600 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
3.4-3.6 GHz Power Amplifier 3号至三月六日GHz功率放大
Single-band power amplifiers
The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
|
| FLL400IK-2C |
High Voltage - High Power GaAs FET
|
Eudyna Devices Inc
|
| FLL400IK-2 |
High Voltage - High Power GaAs FET
|
Eudyna Devices Inc
|
| MGF0909A MGF0909 0909A |
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
L,S BAND POWER GaAs FET
L /S BAND POWER GaAs FET
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| FMS2014QFN FMS2014-001 FMS2014-001-EB |
High Power GaAs SPDT Switch
|
Filtronic Compound Semiconductors
|
| FLL21E045IY |
L,S-band High Power GaAs FET
|
Eudyna Devices Inc
|
| FLL600IQ-2C |
L-Band High Power GaAs FET
|
EUDYNA[Eudyna Devices Inc]
|
| FLL410IK-4C |
L-Band High Power GaAs FET
|
Fujitsu Microelectronics
Eudyna Devices Inc
Fujitsu Media Devices Limited
Fujitsu Component Limited.
|
