| PART |
Description |
Maker |
| MIE-824L3 |
GaAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| MIE-134A1-02 |
GaAs HIGH POWER SIDE LOOK PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| MIE-114A2 |
GaAs HIGH POWER SIDE LOOK PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| MIE-304A2 |
AlGaAs/GaAs HIGH POWER T-1 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| OHE940CC |
High-Power GaAs IRED mounted in durable,hermetically sealed TO-18 metal can Package 高功率GaAs登记合格决定安装在坚固耐用，密封至18金属罐包
|
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
|
| FLL1200IU-2 |
L-Band Medium & High Power GaAs FET L BAND, GaAs, N-CHANNEL, RF POWER, JFET
L-Band Medium & High Power GaAs FET
|
Fujitsu Component Limited.
Fujitsu, Ltd.
Fujitsu Limited
|
| FLU17XM |
L BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET
L-Band Medium & High Power GaAs FET
|
FUJITSU LTD
EUDYNA[Eudyna Devices Inc]
|
| AIDM9 AIDM17J AIDM150 AIDM125 AIDM13G AIDM175 AIDM |
2-Channel Differential Input 24-Bit No Latency Delta Sigma ADC; Package: SSOP; No of Pins: 16; Temperature Range: 0°C to 70°C
.): 1Mbit/s; Current Transfer Ratio: 10% (min) (19% (min) for rank O) @I_F(IN)=16mA; Isolation voltage BVs @1minute (min) (V_rms): 5000; Safety Standard
24-Bit µPower No Latency Delta-Sigma ADC in SO-8; Package: SO; No of Pins: 8; Temperature Range: 0°C to 70°C
IF Wave Detection ICs; Application: Cordless Telephone; Operating Voltage: 1.8-5.5V; Package: SSOP16 (0.65); Comments: Mixer/ IF Amp/ Noise Detection
) Typ.: 4.5; Package Type: 2-11D1B
) Typ.: 2.5; Package Type: 2-11D1B
IC Output Photocouplers and Photorelays; Features: Buffer logic type(totem pole output); Package: MFSOP6; Surface Mount Type: Y; Number of Pins: 5
IC Output Photocouplers and Photorelays; Features: Inverter logic type(totem pole output); Package: SDIP6; Surface Mount Type: Y; Number of Pins: 6
Serial 12-Bit, 3.5Msps Sampling ADCs with Shutdown; Package: MSOP; No of Pins: 10; Temperature Range: -40°C to 85°C
High-Frequency Switching Power Transistors (2SA Series); Surface Mount Type: Y; Package: PW-MINI; Number Of Pins: 3; Publication Class: High Frequency Switching Power Transistor
MOSFETs - Nch VDSS=30V; Surface Mount Type: N; Package: PW-MOLD; R DS On (Ω): (max 0.12) (max 0.1); I_S (A): (max 5)
C-Band Power GaAs IMFETs; Frequency Band (GHz): 3.4-3.8; P1dB (dBm): 42.5; G1dB (dB): 12.5; Ids (A) Typ.: 4.4; IM3 (dBc) Typ.: -45; Rth (°C/W) Typ.: 1.5; Package Type: 2-16G1B 逻辑IC
C-Band Power GaAs IMFETs; Frequency Band (GHz): 5.0-5.3; P1dB (dBm): 42.5; G1dB (dB): 8.5; Ids (A) Typ.: 4.4; IM3 (dBc) Typ.: -45; Rth (°C/W) Typ.: 1.5; Package Type: 2-16G1B 逻辑IC
Logic IC 逻辑IC
C-Band Power GaAs IMFETs; Frequency Band (GHz): 5.3-5.9; P1dB (dBm): 45.5; G1dB (dB): 8.5; Ids (A) Typ.: 8; IM3 (dBc) Typ.: -45; Rth (°C/W) Typ.: 1.2; Package Type: 2-16G1B 逻辑IC
C-Band Power GaAs IMFETs; Frequency Band (GHz): 5.9-6.4; P1dB (dBm): 38.5; G1dB (dB): 10; Ids (A) Typ.: 1.6; IM3 (dBc) Typ.: -47; Rth (°C/W) Typ.: 3.8; Package Type: 2-11D1B 逻辑IC
MOSFETs - Nch VDSS=30V; Surface Mount Type: N/Y; Package: TO-220FL/SM; R DS On (Ω): (max 0.02); I_S (A): (max 45)
|
Glenair, Inc.
Square D by Schneider Electric
|
| FLL200IB-3 FLL200IB-2 FLL200IB-1 |
L-Band Medium & High Power GaAs FET
L-Band Medium & High Power GaAs FET L波段中等
|
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
Sumitomo Electric Industries, Ltd.
|
| TC1706 |
3 W High Linearity and High Efficiency GaAs Power FETs
|
Transcom, Inc.
|
| FLL21E090IK |
High Voltage - High Power GaAs FET 高电高功率GaAs场效应管
|
Sumitomo Electric Industries, Ltd.
|
