| PART |
Description |
Maker |
| MGFS45V2527A |
2.5 - 2.7GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFS45A2527B MGFS45A2527B11 |
2.5-2.7 GHz BAND / 32W
|
Mitsubishi Electric Semiconductor
|
| MGFL45V1920A MGFL45V1920A11 |
1.9-2.0 GHz BAND / 32W
|
Mitsubishi Electric Semiconductor
|
| MGFC45V3642A_04 MGFC45V3642A MGFC45V3642A04 |
3.6 - 4.2GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFL45V1920A_04 MGFL45V1920A MGFL45V1920A04 |
1.9 - 2.0GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC45V5867 |
MGFC45V5867
5.8~6.75GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFS48V2527 |
2.5 - 2.7GHz BAND 60W GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC36V7177A |
7.1 - 7.7GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
| MGFC41V7177 |
7.1 - 7.7GHz BAND 12W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFX39V0717 X390717 |
10.7 - 11.7GHz BAND 8W INTERNALLY MATCHD GaAs FET 10.7 - 11.7GHz频段8瓦特国内MATCHD砷化镓场效应
From old datasheet system
|
Mitsubishi Electric, Corp.
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| FMM5805GJ-1 |
17700 MHz - 19700 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
17.7-19.7GHz Power Amplifier MMIC
|
List of Unclassifed Manufacturers
ETC
Electronic Theatre Controls, Inc.
|
