| PART |
Description |
Maker |
| MCSO1 MCSO1V |
From old datasheet system
3.3V SM OSCILLATOR MIL TEMP
|
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
|
| PUMA2S16000M-025 PUMA77S16000M-020 PUMA2S16000I-02 |
15NS, 68 PLCC, IND TEMP(EPLD)
SRAM|512KX32|CMOS|PGA|66PIN|CERAMIC
15NS, 68 PLCC, COM TEMP(EPLD)
SRAM|512KX32|CMOS|QFP|68PIN|CERAMIC
20NS, 44 PLCC, IND TEMP(EPLD)
30MHZ, 20 PLCC, IND TEMP, GREEN(FPGA)
15NS, TQFP, COM TEMP, ROHS-A(EPLD)
20NS, 44 TQFP, COM TEMP(EPLD)
7NS, 44 TQFP, COM TEMP, GREEN(EPLD)
30MHZ, 3.3V, 20 PLCC, IND TEMP(FPGA) 静态存储器| 512KX32 |的CMOS |美巡赛| 66PIN |陶瓷
|
Intel, Corp.
|
| HD-6409 HD6409 HD3-6409-9 HD1-6409-9 HD9P6409-9 FN |
Unijunction Transistor; Transistor Polarity:N Channel; Power Dissipation:600mW; Operating Temp. Max:175 C; Operating Temp. Min:-65 C
CMOS Manchester Encoder-Decoder(CMOS Manchester编码译码
From old datasheet system
|
Harris Corporation
INTERSIL[Intersil Corporation]
|
| PUMA67S4000M-020 PUMA67S4000M-35 PUMA2S4000M-020 P |
SRAM|128KX32|CMOS|LDCC|68PIN|CERAMIC
2NS, 352 BGA, COM TEMP(FPGA)
SRAM|128KX32|CMOS|PGA|66PIN|CERAMIC
10 MHZ, 3.3V, 44 PLCC, IND TEMP(FPGA)
10MHZ, 20 PLCC, COM TEMP(FPGA) 静态存储器| 128KX32 |的CMOS |美巡赛| 66PIN |陶瓷
128K X 32 MULTI DEVICE SRAM MODULE, 25 ns, CQMA68
|
NIC Components, Corp.
|
| CC1V-T1M CC1V-T1A CC1V |
SM Crystal Mil Temp Low Freq
|
Golledge Electronics Ltd.
GOLLEDGE[Golledge Electronics Ltd]
|
| AM29LV400B-100WAC AM29LV400B-100WACB AM29LV400B-10 |
PTSE 6C 6#20 SKT RECP
Circular Connector; MIL SPEC:MIL-C-26482, Series I, Crimp; Body Material:Metal; Series:MS C-26482 Series I; No. of Contacts:10; Connector Shell Size:12; Connecting Termination:Crimp; Circular Shell Style:Cable Receptacle RoHS Compliant: No
Circular Connector; MIL SPEC:MIL-C-26482, Series I; Body Material:Aluminum Alloy; Series:MS3120; No. of Contacts:6; Connector Shell Size:10; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle RoHS Compliant: No
FEEDTHRU CAPACITOR, 470PF 4A 100VFEEDTHRU CAPACITOR, 470PF 4A 100V; Capacitance:0.47nF; Voltage rating, DC:100V; Capacitor dielectric type:Ceramic Multi-Layer; Tolerance, :50%; Tolerance, -:20%; Temp, op. max:125(degree C); Temp,
CAP 0.47UF 50V 50-20% X7R SMD-0612 TR-7 PLATED-NI/SN HC-FEEDTHRU
PTSE 3C 3#20 PIN RECP
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 8 FLASH 3V PROM, 100 ns, PBGA48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 8 FLASH 3V PROM, 120 ns, PBGA48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 4兆位12x 8-Bit/256x 16位）.0伏的CMOS只引导扇区闪
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 8 FLASH 3V PROM, 150 ns, PBGA48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 8 FLASH 3V PROM, 90 ns, PBGA48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 4兆位12亩x 8-Bit/256亩x 16位）.0伏的CMOS只引导扇区闪
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| PW-82520N3-100 PW-82521N3-100 PW-82520N3-440 PW-82 |
QTR PWR,L FEAT,30,CERAM JLCC,883C;LEV B(EPLD)
QTR PWR,L FEAT,30NS,CERA JLCC,883C;LEV B(EPLD)
20NS,CERAM JLCC,883C; LEV B COMPLIANT(EPLD)
25NS,CERAMIC JLCC,MIL TEMP(EPLD)
30NS, CERDIP, IND TEMP(EPLD)
12NS, OTP, PLCC, COM TEMP(EPLD)
5V, 20MHZ, PDIP, IND TEMP, GREEN(MCU AVR)
1.8V, 10MHZ, PDIP, IND TEMP, GREEN(MCU AVR)
20NS,CERDIP,883C; LEV B FULLY COMPLIANT(EPLD)
5V, 20MHZ, SOIC, IND TEMP, GREEN(MCU AVR)
STK600 adapter for all SOIC devices(MCU AVR) 工业控制IC
1.8V, 1MHZ, PDIP, IND TEMP(MCU AVR) 工业控制IC
5V, 20 MHZ, MLF, IND TEMP, GREEN(MCU AVR) 工业控制IC
10 MHZ, MLF, IND TEMP, GREEN, 1.8V(MCU AVR) 工业控制IC
Industrial Control IC 工业控制IC
10MHZ, TQFP, IND TEMP, GREEN(MCU AVR) 工业控制IC
5V, 8MHZ, PDIP, COM TEMP(MCU AVR) 工业控制IC
5V, 20MHZ, PDIP, IND TEMP(MCU AVR)
1.8V, 10 MHz, MLF, IND TEMP, GREEN(MCU AVR)
1.8V, 10MHZ, SOIC, IND TEMP, GREEN(MCU AVR)
1.8V, 1MHz, PDIP, IND TEMP, GREEN(MCU AVR)
1.8V, 10MHZ, MLF, IND TEMP, GREEN(MCU AVR)
|
Merrimac Industries, Inc.
Bourns, Inc.
TE Connectivity, Ltd.
Ecliptek, Corp.
Bivar, Inc.
The Connor-Winfield, Corp.
NXP Semiconductors N.V.
Advanced Interconnections, Corp.
Glenair, Inc.
Sumida, Corp.
|
| X2864HJ-70 X2864BPI-18 X2864HJ-90 X2864BGM-12 X286 |
10MS, 8 PDIP, IND TEMP, GREEN, 1.8V(SERIAL EE)
10MS, SOT23, IND TEMP, GREEN, 1.8V(SERIAL EE)
32M CONFIG FLASH, 44 PLCC, IND(FPGA)
10 MHZ, 8 LAP, IND TEMP(FPGA)
25NS, 24 SOIC, IND TEMP(EPLD)
10MS, 8 TSSOP, EXT TEMP, 2.7V(SERIAL EE)
DIE SALE,1.8V, 11MIL(SERIAL EE)
10MHZ, 8 PDIP, IND TEMP(FPGA)
10MHZ, 20 PLCC, COM TEMP(FPGA)
10MHZ, 44 TQFP, COM TEMP(FPGA)
128Kx8 EEPROM
20NS,CERDIP,883C; LEV B FULLY COMPLIANT(EPLD)
10MHZ, 20 SOIC, COM TEMP, 5K MOQ(FPGA)
10 MHZ, 20 PLCC, IND TEMP, GREEN(FPGA) x8的EEPROM
30MHZ, 3.3V, 8 LAP, COM TEMP(FPGA) x8的EEPROM
10MHZ, 20 PLCC, IND TEMP(FPGA) x8的EEPROM
30MHZ, 20 PLCC, IND TEMP, GREEN(FPGA) x8的EEPROM
|
ITT, Corp.
Pericom Technology (Shanghai) CO., Ltd.
Diodes, Inc.
Electronic Theatre Controls, Inc.
|
| 5962D9960601QUA 5962D9960601QUC 5962D9960601QUX 59 |
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Mil temp. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Mil temp. Lead finish gold. Total dose 1E4(10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Mil temp. Lead finish factory option. Total dose 1E4(10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish gold. Total dose 1E4(10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish factory option. Total dose 1E4(10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Extended industrial temp. Lead finish hot solder dipped. Total dose 1E4 (10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Extended industrial temp. Lead finish gold. Total dose 1E4 (10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Extended industrial temp. Lead finish factory option. Total dose 1E4 (10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Extended industrial temp. Lead finish hot solder dipped. Total dose 1E4 (10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Extended industrial temp. Lead finish factory option. Total dose 1E4 (10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Extended industrial temp. Lead finish gold. Total dose 1E4 (10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish hot solder dipped. Total dose none.
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Extended industrial temp. Lead finish factory option. Total dose none.
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish gold. Total dose none.
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish hot solder dipped. Total dose 3E4(30krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish gold. Total dose 3E4(30krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish factory option. Total dose 3E4(30krad(Si)).
512K x 8 SRAM. 100ns access time, 5V operation. Prototype flow. Lead finish factory option.
512K x 8 SRAM. 100ns access time, 5V operation. Extended industrial temp rang flow. Lead finish gold.
|
Aeroflex Circuit Technology
|
| OT7602C1 OT7602C1_A OT7602C1/A OT7602C132.768KHZ O |
CRYSTAL OSCILLATOR, CLOCK, 0.032768 MHz, CMOS OUTPUT
SM CMOS Oscillator Low Power
|
Golledge Electronics, Ltd.
GOLLEDGE[Golledge Electronics Ltd]
|
| O16.368-JT22G-E-M-1.8 O16.368-JT22G-E-M-2.8 O16.36 |
Temp. Compensated Crystal Oscillator
|
Jauch Quartz Gmbh
|
|
