| PART |
Description |
Maker |
| MAX2374EBT MAX2374 |
SiGe, Variable IIP3, Low-Noise Amplifier in UCSP Package
From old datasheet system
|
MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
|
| MA4VAT904-1061T |
High IIP3 PIN Diode Variable Attenuator (0.80-1.0 GHz)
|
Tyco Electronics
|
| SKY12232-21 |
High IIP3 2.65-3.65 GHz Voltage-Controlled Variable Attenuator
|
Skyworks Solutions Inc.
|
| NESG240033 NESG240033-A NESG240033-T1B NESG240033- |
NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG)
|
NEC
|
| NESG220033 NESG220033-A NESG220033-T1B NESG220033- |
NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG)
|
NEC
|
| MSG33001 |
SiGe HBT type For low-noise RF amplifier
|
http://
|
| BGU7005 |
SiGe:C Low Noise Amplifier MMIC for GPS
|
NXP Semiconductors
|
| MSG33002 |
SIGE HBT TYPE FOR LOW-NOISE RF AMPLIFIER
|
http://
|
| SGA-8343Z |
LOW NOISE HIGH GAIN SIGE HBT
|
Sirenza Microdevices
|
| MAX2645 |
3.4GHz to 3.8GHz SiGe Low-Noise Amplifier/PA Predriver
|
MAXIM - Dallas Semiconductor
|
| BFP750 |
High Linearity Low Noise SiGe:C NPN RF Transistor
|
Infineon Technologies AG
|
| BFP650 BFP65010 |
High Linearity Low Noise SiGe:C NPN RF Transistor
|
Infineon Technologies AG
|
