| PART |
Description |
Maker |
| MA4E2508MSP-T MADS-002508-1112HT MA4E2508L-1112 MA |
SILICON, LOW BARRIER SCHOTTKY, KU BAND, MIXER DIODE CASE 1112, 2 PIN
SURMOUNTTM Low, Medium, & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair
|
NXP Semiconductors N.V.
M/A-COM Technology Solutions, Inc.
|
| MA4E2501L- MA4E2501L-1290 MA4E2501L-1290T MA4E2501 |
SURMOUNTTM Low Barrier 0201 Footprint Silicon Schottky Diodes
|
M/A-COM Technology Solutions, Inc.
|
| MA4E2513L-1289 |
SURMOUNTTM Low Barrier Tee ?301 Footprint Silicon Schottky Diodes
|
M/A-COM Technology Solutions, Inc.
|
| MA4E2508M MA4E2508 MA4E2508H MA4E2508L |
SURMOUNTTM Low and Medium & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair
|
MACOM[Tyco Electronics]
|
| BAT15-099R BAT1599R Q62702-A0043 |
RES CHIP 1K QW 5% SILICON, LOW BARRIER SCHOTTKY, MIXER DIODE
Silicon Crossover Ring Quad Schottky Diode (Low barrier diode for double balanced mixers/ phase detectors and modulators)
Silicon Crossover Ring Quad Schottky Diode (Low barrier diode for double balanced mixers, phase detectors and modulators)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BAT14-020D BAT14-050D BAT14-090D BAT14-110D BAT14- |
Silicon Schottky Diodes (Beam lead technology Low dimension High performance Low barrier)
Silicon Schottky Diodes (Beam lead technology Low dimension High performance Medium barrier) 硅肖特基二极管（梁式引线技术方面的高性能低中等障碍）
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| BAT15-020R BAT15-050R BAT15-090R BAT15-110R BAT15- |
Silicon Schottky Diodes (Beam lead technology Low dimension High performance Low barrier) 硅肖特基二极管（梁式引线技术低维高性能，低障碍
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| PMEG4010ER10 PMEG4010ER |
1 A low V_F MEGA Schottky barrier rectifier 1 A, 40 V, SILICON, SIGNAL DIODE
1 A low VF MEGA Schottky barrier rectifier
|
NXP Semiconductors N.V.
|
| BAT15-04 BAT15_04 Q62702-A504 |
Silicon Dual Schottky Diode (DBS mixer applications to 12 GHz Low noise figure Low barrier type) 硅双肖特基二极管（星展混频器应用12 GHz低噪声系数低屏障型）
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| DME3019-325-008 DME3013-131-012 DMJ3107-364-008 DM |
SILICON, MEDIUM BARRIER SCHOTTKY, S BAND, MIXER DIODE
SILICON, MEDIUM BARRIER SCHOTTKY, X BAND, MIXER DIODE
SILICON, HIGH BARRIER SCHOTTKY, KU BAND, MIXER DIODE
SILICON, MEDIUM BARRIER SCHOTTKY, KU BAND, MIXER DIODE
SILICON, MEDIUM BARRIER SCHOTTKY, K BAND, MIXER DIODE
SILICON, LOW BARRIER SCHOTTKY, KU BAND, MIXER DIODE
SILICON, LOW BARRIER SCHOTTKY, X BAND, MIXER DIODE
SILICON, LOW BARRIER SCHOTTKY, S BAND, MIXER DIODE
|
SKYWORKS SOLUTIONS INC
|
| PMEG3010BER PMEG3010BER-15 |
1 A low Vf MEGA Schottky barrier rectifier 1 A, SILICON, SIGNAL DIODE
|
NXP Semiconductors N.V.
|
