| PART |
Description |
Maker |
| MA78 MA6X078 |
Band Switching Diodes
Silicon epitaxial planar type
|
PANASONIC[Panasonic Semiconductor]
|
| BAW78 BAW79D BAW78D BAW79 |
General Purpose Diodes - Silicon Switching Diode for high-speed switching
Silicon Switching Diodes
|
INFINEON[Infineon Technologies AG]
|
| DAN235U DAN235E |
Diodes > High Frequency Diodes > Band switching diodes
|
ROHM
|
| BAT68-04W BAT68-05W BAT68-06W BAT68W |
Silicon Schottky Diodes (For mixer applications in the VHF/UHF range For high speed switching) SILICON, VHF-UHF BAND, MIXER DIODE
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| MA2C196 MA196 |
Small-signal device - Diodes - Swicthing Diodes
Switching Diodes
DO-34-A1
From old datasheet system
Silicon epitaxial planar type
|
Matsshita / Panasonic
PANASONIC[Panasonic Semiconductor]
|
| BA982 |
Band Switching Diodes
|
Vishay Siliconix
|
| BA483 BA482 BA484 |
Band-switching diodes
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| BAS40- Q62702-D339 BAS40 BAS40-04 BAS40-05 Q62702- |
Silicon Schottky Diodes (General-purpose diodes for high-speed switching Circuit protection Voltage clamping) 2 ELEMENT, SILICON, SIGNAL DIODE
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| GMV2114-GM1 GMV2154-GM1 GMV1981-GM1 GMV5007-GM1 GM |
Surface Mount Varactor Diodes
C BAND, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
C BAND, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
C BAND, 0.25 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE
|
Microsemi Corporation
MICROSEMI CORP-LOWELL
|
| HVD147 |
Diodes>Switching
PIN-Diodes for Antenna Switching
Silicon Epitaxial Trench Pin Diode for Antenna Switching
|
Renesas Electronics Corporation
|
| HVL147 |
Diodes>Switching
PIN-Diodes for Antenna Switching
Silicon Epitaxial Trench Pin Diode for Antenna Switching
|
Renesas Electronics Corporation
|
| KVX2162 KVX2301 KVX2201-23-4 KVX3201A-23-3 KVX3201 |
SURFACE MOUNT VARACTOR DIODES Wide Bandwidth SOT-23 Hyperabrupt TM
L BAND, 50 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
L BAND, 12 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
L BAND, 29 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
|
Microsemi Corporation
MICROSEMI CORP-LOWELL
|
