| PART |
Description |
Maker |
| V436516R04VATG-10PC |
3.3 VOLT 16M x 64 using 8M x 16 PC100 UNBUFFERED SDRAM MODULE
|
Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
Mosel Vitelic Corp
|
| V436416S04V |
3.3 VOLT 16M x 64 HIGH PERFORMANCE PC100 UNBUFFERED SDRAM MODULE
|
Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
Mosel Vitelic Corp
|
| V436532S04VATG-10PC |
ER 10C 10#16 PIN RECP
3.3 VOLT 32M x 64 HIGH PERFORMANCE PC100 UNBUFFERED SDRAM MODULE
|
Mosel Vitelic, Corp.
MOSEL[Mosel Vitelic, Corp]
Mosel Vitelic Corp
Mosel Vitelic Corp
|
| V436516Z04VATG-10PC |
ER 10C 10#16 SKT RECP 3.316米x 64高性能PC100的无缓冲的SODIMM
3.3 VOLT 16M x 64 HIGH PERFORMANCE PC100 UNBUFFERED SODIMM
|
Mosel Vitelic, Corp.
MOSEL[Mosel Vitelic, Corp]
Mosel Vitelic Corp
|
| GMM2649233ETG |
8Mx64 Bits PC100/PC133 Sdram Unbuffered Dimm Based on 8Mx8 Sdram With Lvttl
|
Hynix Semiconductor
|
| HB52RD328DC-A6F HB52RD328DC-A6FL HB52RD328DC-B6F H |
256 MB Unbuffered SDRAM S.O.DIMM 32-Mword × 64-bit, 100 MHz Memory Bus, 2-Bank Module (32 pcs of 16 M × 4 components) PC100 SDRAM
256 MB Unbuffered SDRAM S.O.DIMM 32-Mword 隆驴 64-bit, 100 MHz Memory Bus, 2-Bank Module (32 pcs of 16 M 隆驴 4 components) PC100 SDRAM
|
Elpida Memory
|
| IBM13T16644NPA |
16M x 64 PC100 SDRAM(1MB PC100 同步动态RAM)
|
IBM Microeletronics
|
| M366S1723DTS-L7C M366S1723DTS M366S1723DTS-C M366S |
PC133/PC100 Unbuffered DIMM PC133/PC100无缓冲DIMM
16Mx64 SDRAM DIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Data sheet
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| M470T6464AZ3-CLE6_D5_CC M470T5669AZ0-CLE6/D5/CC M4 |
DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 1Gb A-die 64-bit Non-ECC
|
Samsung semiconductor
|
| KMM374S403CT |
PC100 SDRAM MODULE
|
Samsung semiconductor
|
| KMM366S1623CTY-GL KMM366S1623CTY KMM366S1623CTY-GH |
PC100 SDRAM MODULE
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
