| PART |
Description |
Maker |
| CPD80V |
Chip Form: HIGH VOLTAGE SWITCHING DIODE
Switching Diode High Voltage Switching Diode Chip
|
Central Semiconductor Corp
|
| CPD80V10 |
Switching Diode High Voltage Switching Diode Chip
|
Central Semiconductor Corp
|
| BAS21HT1G |
High Voltage Switching Diode 0.2 A, 250 V, SILICON, SIGNAL DIODE
|
ON Semiconductor
|
| MMBD3004S MMBD3004S-7 MMBD3004 MMBD3004S- |
HIGH VOLTAGE SURFACE MOUNT SWITCHING DIODE 0.225 A, 350 V, 2 ELEMENT, SILICON, SIGNAL DIODE
|
Diodes, Inc.
DIODES[Diodes Incorporated]
http://
|
| MAX1745 MAX1745AUB MAX1745EUB MAX1744 MAX1744EUB M |
High-Voltage, Step-Down DC-DC Controller in uMAX
High-Voltage, Step-Down DC-DC Controller in レMAX
High-Voltage, Step-Down DC-DC Controller in ??AX
High-Voltage Step-Down DC-DC Controller in MAX
Replaced by TMS320C6410 : Digital Signal Processor 40-PDIP 0 to 70
High-Voltage, Step-Down DC-DC Controller in MAX SWITCHING CONTROLLER, 330 kHz SWITCHING FREQ-MAX, PDSO10
High-Voltage, Step-Down DC-DC Controller in µMAX SWITCHING CONTROLLER, 330 kHz SWITCHING FREQ-MAX, PDSO10
High-Voltage, Step-Down DC-DC Controller in MAX 高压、降压型DC-DC控制器，µMAX封装
|
MAXIM[Maxim Integrated Products]
Maxim Integrated Products, Inc.
|
| RM1200DB-66S |
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| RM1200HE-66S |
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| RM1200DG-66S |
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| RM200DG-130S |
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| RM600DY-66S |
HIGH POWER SWITCHING USE INSULATED TYPE HVDi (High Voltage Diode) Module
|
Mitsubishi Electric Semiconductor
|
| 1SS311 |
Diode Silicon Epitaxial Planar Type High Voltage,High Speed Switching Applications
|
TOSHIBA
|
| 1SS399 |
DIODE (HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
