| PART |
Description |
Maker |
| Q62702-A1050 BAS16W |
Silicon Switching Diode (For high speed switching applications) 0.25 A, SILICON, SIGNAL DIODE
From old datasheet system
|
SIEMENS AG
Siemens Semiconductor Group
|
| RD1006LS |
Diffused Junction Silicon Diode Ultrahigh-Speed Switching Diode
10 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AC
|
Sanyo Semicon Device
|
| BAS40-07W BAS4007W |
Silicon Schottky Diode Preliminary data (General-purpose diode for high-speed switching Circuit protection Voltage clamping) 2 ELEMENT, SILICON, SIGNAL DIODE
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| SW08CXC300 SW12CXC300 SW58CXC620 SW42CXC680 SW30CX |
650 A, 800 V, SILICON, RECTIFIER DIODE
650 A, 1200 V, SILICON, RECTIFIER DIODE
1520 A, 5800 V, SILICON, RECTIFIER DIODE
1610 A, 4200 V, SILICON, RECTIFIER DIODE
5100 A, 3000 V, SILICON, RECTIFIER DIODE
5100 A, 3200 V, SILICON, RECTIFIER DIODE
1030 A, 3600 V, SILICON, RECTIFIER DIODE
2050 A, 2800 V, SILICON, RECTIFIER DIODE
1860 A, 4000 V, SILICON, RECTIFIER DIODE
|
WESTCODE SEMICONDUCTORS LTD
|
| 1N74 1N60D 1N68A 1N96A 1N72 1N73 1N93 1N63 1N61 1N |
Diode Switching 100V 10A 2-Pin
Diode Switching 50V 3A 2-Pin Case A
GOLD BOUNDED GERMANUM DIODE
Diode Small Signal Switching 75V 0.3A Automotive 2-Pin DO-35 T/R
Diode Switching 125V 0.0003A 2-Pin DO-35
Diode Switching 50V 0.005A 2-Pin Case H
GOLD BONDED GERMANIUM DIODES
|
New Jersey Semiconductor
|
| 1N2282 1N1185A 1N1612 1N3055 1N4510 1N3573R 1N1581 |
35 A, 300 V, SILICON, RECTIFIER DIODE, DO-5
40 A, 150 V, SILICON, RECTIFIER DIODE, DO-5
5 A, 50 V, SILICON, RECTIFIER DIODE, DO-4
0.125 A, SILICON, SIGNAL DIODE
12 A, 1000 V, SILICON, RECTIFIER DIODE, DO-4
3.5 A, 500 V, SILICON, RECTIFIER DIODE, DO-4
3 A, 50 V, SILICON, RECTIFIER DIODE, DO-4
1 A, 400 V, SILICON, SIGNAL DIODE, DO-4
1 A, 200 V, SILICON, SIGNAL DIODE, DO-4
0.8 A, SILICON, SIGNAL DIODE
35 A, 800 V, SILICON, RECTIFIER DIODE, DO-5
275 A, 150 V, SILICON, RECTIFIER DIODE, DO-9
|
|
| BAS521LP-7B BAS521LP-7 |
Discrete - Diodes (Less than 0.5A) - Switching Diodes
0.4 A, 325 V, SILICON, SIGNAL DIODE
HIGH VOLTAGE SWITCHING DIODE
|
Diodes Incorporated
|
| FC903 FC903-TR-E |
0.1 A, 3 ELEMENT, SILICON, SIGNAL DIODE
High-Speed Switching Composite Diode Silicon Epitaxial Planar Type
High-Speed Switching Composite Diode
|
ON Semiconductor
SANYO SEMICONDUCTOR CO LTD
SANYO[Sanyo Semicon Device]
|
| JANTX1N4454 JANTX1N4454-1 JANTXV1N4454-1 1N4454 1N |
Signal or Computer Diode
Silicon Switching Diode DO-35 Glass Package 0.2 A, SILICON, SIGNAL DIODE, DO-35
|
MICROSEMI[Microsemi Corporation]
Microsemi, Corp.
|
| ISD380-9 ISD25-15 ISDF65-7 ISD320-16 ISDR320-22 IS |
380 A, 900 V, SILICON, RECTIFIER DIODE
25 A, 1500 V, SILICON, RECTIFIER DIODE
65 A, 700 V, SILICON, RECTIFIER DIODE
320 A, 1600 V, SILICON, RECTIFIER DIODE
320 A, 2200 V, SILICON, RECTIFIER DIODE
160 A, 1400 V, SILICON, RECTIFIER DIODE
65 A, 400 V, SILICON, RECTIFIER DIODE
380 A, 1300 V, SILICON, RECTIFIER DIODE
380 A, 1200 V, SILICON, RECTIFIER DIODE
380 A, 1500 V, SILICON, RECTIFIER DIODE
380 A, 600 V, SILICON, RECTIFIER DIODE
380 A, 400 V, SILICON, RECTIFIER DIODE
380 A, 500 V, SILICON, RECTIFIER DIODE
160 A, 900 V, SILICON, RECTIFIER DIODE
160 A, 1000 V, SILICON, RECTIFIER DIODE
160 A, 500 V, SILICON, RECTIFIER DIODE
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