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KBE00F005A-D411 - 512Mb NAND*2 256Mb Mobile SDRAM*2

KBE00F005A-D411_1259779.PDF Datasheet
 Full text search : 512Mb NAND*2 256Mb Mobile SDRAM*2
 Product Description search : 512Mb NAND*2 256Mb Mobile SDRAM*2

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KBE00G003M-D411 KBE00G003M-D4110 NAND 512Mb*2 Mobile SDRAM 256Mb*2 NAND闪存12Mb * 2移动SDRAM 256Mb 2
SPECIALTY MEMORY CIRCUIT, PBGA107
 SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
KBE00F005A-D411 KBE00F005A 512Mb NAND*2 256Mb Mobile SDRAM*2
 SAMSUNG[Samsung semiconductor]
KBE00S003M-D411 KBE00S003M 1Gb NAND*2 256Mb Mobile SDRAM*2
From old datasheet system
1Gb NANDx2 256Mb Mobile SDRAMx2
 SAMSUNG[Samsung semiconductor]
W988D2FBJX6E W988D2FBJX6I W988D2FBJX7E W988D2FBJX7 256Mb Mobile LPSDR
 Winbond
W988D6FB (W988D2FB / W988D6FB) 256Mb Mobile LPSDR
 Winbond
MT46H16M32LG MT46H32M16LF MT46H32M16LFBF-6ITC MT46 512Mb: x16, x32 Mobile Low-Power DDR SDRAM Features
 Micron Technology
HYB25D512800AT-7 HYB25D512800AT-8 HYB25D512160AT-8 512Mb (64Mx8) DDR266A (2-3-3)
512Mb (64Mx8) DDR200 (2-2-2)
512Mb (32Mx16) DDR200 (2-2-2)
512Mb (128Mx4) DDR200 (2-2-2)
512Mb (64Mx8) DDR333 (2.5-3-3) ？的512Mb4Mx8DDR333内存.5-3-3）？
 Electronic Theatre Controls, Inc.
W3EG7264S-AD4 512MB - 2x32Mx72 DDR ECC SDRAM UNBUFFERED w/PLL 512MB 2x32Mx72的DDR ECC的内存缓冲瓦锁相
 Optrex America, Inc.
HYB39S256800CT-8 HYB39S256400CT-7.5 HYB39S256800CT 256Mb (64M x 4) PC133 3-3-3
256Mb (32M x 8) PC133 3-3-3
256Mb (32M x 8) PC100 2-2-2 56Mb的（32M的8）PC100-2-2
x16 SDRAM x16内存
 Toshiba, Corp.
SIEMENS AG
 
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KBE00F005A-D411 Processors KBE00F005A-D411 Crystals KBE00F005A-D411 components KBE00F005A-D411 npn transistor KBE00F005A-D411 atmel
 

 

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