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K1B6416B6C - 4Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory

K1B6416B6C_1258909.PDF Datasheet


 Full text search : 4Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory
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K1B6416B6C 4Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory
Samsung Electronic
GS81032AT-150I GS81032AT-138I GS81032AT-133I GS810 18ns 66MHz 32K x 32 1Mb synchronous burst SRAM
12ns 100MHz 32K x 32 1Mb synchronous burst SRAM
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K3P7V1000 K3P7V1000B-YC K3P7VU1000B-YC 64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM 6400位(8Mx8 / 4Mx16)的CMOS掩膜ROM
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
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SAMSUNG SEMICONDUCTOR CO. LTD.
KM23C64000T 64M-Bit (8Mx8 /4Mx16) CMOS Mask ROM(64M(8Mx8 /4Mx16) CMOS掩膜ROM)
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K7A803609A K7A801809A 256Kx36Bit Synchronous Pipelined Burst SRAM Data Sheet
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Samsung Electronic
KM732V787 128Kx32-Bit Synchronous Burst SRAM
Samsung Semiconductor
AS4LC8M8S0-10FTC AS4LC8M8S0-10TC AS4LC8M8S0-8TC AS 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM 8M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54
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