| PART |
Description |
Maker |
| IXGK50N60C2D1 |
HiPerFAST IGBT with Diode 75 A, 600 V, N-CHANNEL IGBT, TO-264AA
|
IXYS, Corp.
|
| IXSX40N60CD1 IXSK40N60CD1 IXSX IXSK |
IGBT with Diode 75 A, 600 V, N-CHANNEL IGBT
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| MGP11N60ED_D ON1850 MGP11N60ED ON1849 |
IGBT IN TO-220 11 A @ 90C15 A @ 25C 600 VOLTS
From old datasheet system
SHORT CIRCUIT RATED LOW ON-VOLTAGE 15 A, 600 V, N-CHANNEL IGBT, TO-220AB
|
ON Semiconductor
|
| MGP11N60E_D ON1851 MGP11N60E ON1848 |
From old datasheet system
IGBT IN TO-220 11 A @ 90C15 A @ 25C 600 VOLTS
SHORT CIRCUIT RATED LOW ON-VOLTAGE 15 A, 600 V, N-CHANNEL IGBT, TO-220AB
|
ONSEMI[ON Semiconductor]
|
| APT50GT60BR APT50GT60SRG APT50GT60BRG |
Thunderbolt IGBT
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: TO-247 [B]; BV(CES) (V): 600; VCE(sat) (V): 2; IC (A): 52; 110 A, 600 V, N-CHANNEL IGBT, TO-247AD
|
Microsemi Corporation
http://
Microsemi, Corp.
|
| STGW30NC60W STGB30NC60WT4 |
60 A, 600 V, N-CHANNEL IGBT, TO-247AC
30 A - 600 V - ultra fast IGBT
|
STMicroelectronics
|
| MGP4N60ED_D MGP4N60ED ON1873 ON1872 |
IGBT & DIODE IN TO-220 4.0 A @ 90 6.0 A @ 25 600 VOLTS
Insulated Gate Bipolar Transistor with Anti-Parallel Diode
From old datasheet system
|
ON Semiconductor
|
| MGP7N60ED MGP7N60ED_D ON1877 ON1876 |
Insulated Gate Bipolar Transistor withr Anti-Parallel Diode
IGBT & DIODE IN TO-220 7.0 A @ 90 10 A @ 25 600 VOLTS
From old datasheet system
|
ONSEMI[ON Semiconductor]
|
| STGDL6NC60DI STGPL6NC60DI |
6 A, 600 V hyper fast IGBT with Ultrafast diode
|
ST Microelectronics
|
| IRG4PC50UD IRG4PC50UD-E |
55 A, 600 V, N-CHANNEL IGBT, TO-247AD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.65V, @Vge=15V, Ic=27A)
600V UltraFast 8-60 kHz Copack IGBT in a TO-247AC package
|
IRF[International Rectifier]
|
