| PART |
Description |
Maker |
| ISL9K18120 ISL9K18120G3 |
18A, 1200V Stealth Dual Diode
18A 1200V Stealth Dual Diode
18A, 1200V Stealth⑩ Dual Diode
|
FAIRCHILD[Fairchild Semiconductor]
|
| ISL9860PF2 ISL9R860PF2 SAMSUNGSEMICONDUCTORCO.LTD. |
8A, 600V Stealth⑩ Diode
8A 600V Stealth Diode
8A, 600V Stealth Diode 8A条，600V的隐形二极管
|
FAIRCHILD[Fairchild Semiconductor]
SAMSUNG[Samsung semiconductor]
Fairchild Semiconductor Corporation
SAMSUNG SEMICONDUCTOR CO. LTD.
Fairchild Semiconductor, Corp.
Samsung Semiconductor Co., Ltd.
|
| IRGPH40M |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=18A)
|
IRF[International Rectifier]
|
| RURG30120 FN3399 |
30A, 1200V Ultrafast Diode(30A, 1200V 超快速二极管) 30 A, 1200 V, SILICON, RECTIFIER DIODE, TO-247
30A/ 1200V Ultrafast Diode
From old datasheet system
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| ISL9K3060G ISL9K3060G3 ISL9K3060G3NL |
30A, 600V Stealth?/a> Dual Diode
30A, 600V Stealth Dual Diode
30A, 600V Stealth??Dual Diode
30A 600V Stealth Dual Diode
30A, 600V Stealth⑩ Dual Diode
|
FAIRCHILD[Fairchild Semiconductor]
|
| IHW15T120 |
IGBTs & DuoPacks - 15A / 1200V IGBT and 9A / 1200V Diode in DuoPack
IGBT in Trench and Fieldstop technology with soft,fast recovery anti-parallel EmCon HE diode
|
Infineon
|
| ISL9K460P3 |
4A,600V Stealth Dual Diode
|
Fairchild Semiconductor
|
| ISL9R860P2 |
8A, 600V Stealth Diode(8A00V Stealth二极
|
Intersil Corporation
|
| RURD4120S RURD4120 UR4120 RURD4120S9A |
4A, 1200V UltraFast Diode; ; No of Pins: 2; Container: Tape & Reel 4 A, 1200 V, SILICON, RECTIFIER DIODE, TO-252
4A, 1200V Ultrafast Diodes
|
FAIRCHILD[Fairchild Semiconductor]
|
| QIQ1245001 POWEREXINC-QIQ1245001 |
Low side Chopper IGBT Module 1200V 450A IGBT / 1200V 750A Fast Diode
|
POWEREX[Powerex Power Semiconductors]
|
| Q67040-S4387 Q67040-S4493 IDB18E120 IDP18E120 |
Silicon Power Diodes - 18A EmCon in TO220-2
Silicon Power Diodes - 18A EmCon in TO263
Fast Switching EmCon Diode
|
INFINEON[Infineon Technologies AG]
|
